FZ1200R33HE4D_B9 is a three-phase IGBT module with 3300 V blocking voltage and 1200 A continuous collector current, designed for high-power applications such as motor drives, traction systems, and active front-ends. It uses TRENCHSTOP IGBT4 and Emitter Controlled 4 diode technology with a base plate made of AlSiC, and has a module package with CTI > 600. The module is rated for a maximum junction temperature of 150 °C and supports peak collector current of 2400 A, with low switching losses, low saturation voltage, and high short-circuit ruggedness. It has an insulated base plate, RoHS compliance, and conforms to IEC 60747, IEC 60749, and IEC 60068 standards. The physical dimensions are not specified, but the device is housed in an IHM-B package with a mass of 1200 g and uses M6 and M4 mounting screws with specified torque ranges.
IHV B 3300 V, 1200 A 190 mm single switch IGBT module with TRENCHSTOP™ IGBT4 and Emitter Controlled 4 diode. The experienced solution for transportation and industry applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FZ1200R33HE4D_B9 |
| Product Name | Power - IGBT - IGBT Modules - FZ1200R33HE4D_B9 |
| VCES | 3300 volts |
| VCE(on) | 2.4 volts |
| IC(max) | 1200 amps |
