Infineon Technologies AG Power - IGBT - IGBT Modules - FZ1200R17HP4_B2 FZ1200R17HP4_B2

Description
1700 V IHM B 130 mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features Extended Operation Temperature Tvj op Enlarged Diode for regenerative operation Low VCEsat 4 kV AC 1min Insulation AlSiC Base Plate for increasing Thermal Cycling Capability Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability Benefits High Power Density Standardized housing Potential Applications
  • Power - IGBT - IGBT Modules - FZ1200R17HP4_B2 - FZ1200R17HP4_B2 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - FZ1200R17HP4_B2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
1700 V IHM B 130 mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features Extended Operation Temperature Tvj op Enlarged Diode for regenerative operation Low VCEsat 4 kV AC 1min Insulation AlSiC Base Plate for increasing Thermal Cycling Capability Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability Benefits High Power Density Standardized housing Potential Applications
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - IGBT - IGBT Modules - FZ1200R17HP4_B2 - FZ1200R17HP4_B2 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Modules - FZ1200R17HP4_B2
FZ1200R17HP4_B2
Power - IGBT - IGBT Modules - FZ1200R17HP4_B2 FZ1200R17HP4_B2
1700 V IHM B 130 mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features Extended Operation Temperature Tvj op Enlarged Diode for regenerative operation Low VCEsat 4 kV AC 1min Insulation AlSiC Base Plate for increasing Thermal Cycling Capability Package with CTI > 400 High Creepage and Clearance Distances High Power and Thermal Cycling Capability Benefits High Power Density Standardized housing Potential Applications

1700 V IHM B 130 mm single switch IGBT Module with soft-switching Trench-IGBT 4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications.


Summary of Features

  • Extended Operation Temperature Tvj op
  • Enlarged Diode for regenerative operation
  • Low VCEsat
  • 4 kV AC 1min Insulation
  • AlSiC Base Plate for increasing Thermal Cycling Capability
  • Package with CTI > 400
  • High Creepage and Clearance Distances
  • High Power and Thermal Cycling Capability

Benefits

  • High Power Density
  • Standardized housing

Potential Applications

Supplier's Site Datasheet
Transistors - FZ1200R17HP4_B2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FZ1200R17HP4_B2
Transistors FZ1200R17HP4_B2
IGBT Modules IGBT 1700V 1200A

IGBT Modules IGBT 1700V 1200A

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Modules
FZ1200R17HP4_B2
IGBT Modules FZ1200R17HP4_B2
IGBT Modules IGBT 1700V 1200A

IGBT Modules IGBT 1700V 1200A

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Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number FZ1200R17HP4_B2 FZ1200R17HP4_B2 FZ1200R17HP4_B2
Product Name Power - IGBT - IGBT Modules - FZ1200R17HP4_B2 Transistors IGBT Modules
VCES 1700 volts
VCE(on) 1.9 volts
IC(max) 1200 amps
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