Trans IGBT Module N-CH 1200V 75A 385W 28-Pin ECONO2-6 Tray Product overview: FS75R12KT4B15BOSA1 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 75A, 385W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 75A, 385W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FS75R12KT4B15BOS
Manufacturer: Infineon Technologies
Win Source Part Number: 919356-FS75R12KT4B15
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: IGBT Module Trench Field Stop Three Phase Inverter 1200 V 75 A 385 W Chassis Mount Module
Package: Module
Package: Bulk
Mounting: Chassis Mount
Family Name: FS75R12
Categories: Discrete Semiconductor Products
Case / Package: Module
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
Quantity per package: 10
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 17 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: SP000408756, FS75R12KT4_B15-ND, FS75R12KT4_B15
IGBT, MODULE, N-CH, 1.2KV, 75A; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.85V; Power Dissipation Pd:385W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-FS75R12KT4B15BOSA1 | 919356-FS75R12KT4B15BOSA1 | 12AC9641 |
| Product Name | 1200V 75A 385W IGBT Transistor | IGBTs - Modules - FS75R12KT4B15BOSA1 | Igbt, Module, N-Ch, 1.2Kv, 75A; Transistor Polarity Infineon |
| PD | 385 milliwatts | 385000 milliwatts |