Infineon Technologies AG IGBT Modules FS75R07U1E4

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IGBT Modules
Description
IGBT Modules
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The FS75R07U1E4 is an IGBT module with a trench/fieldstop IGBT4 and emitter-controlled diode, designed for air conditioning, motor drives, servo drives, and UPS systems. It features a press-fit design with a rugged duplex frame and low-thermal-resistance Al2O3 substrate. The module has a 650 V collector-emitter voltage rating, 75 A continuous collector current, and 150 A peak current. It operates at a maximum junction temperature of 175 °C with 275 W power dissipation. An NTC thermistor with 5.00 kΩ resistance at 25 °C provides temperature feedback. The module complies with UL 94 V-0 and is rated for 2.5 kV RMS isolation. Mounting torque is 8.00-9.00 Nm for M6 screws. Its stray inductance is 35 nH, and thermal resistance from junction to heatsink is 0.45 K/W for the IGBT and 0.60 K/W for the diode. Weight is 34 g.

Datasheet Summary
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The FS75R07U1E4 is an IGBT module with a trench/fieldstop IGBT4 and emitter-controlled diode, designed for air conditioning, motor drives, servo drives, and UPS systems. It features a press-fit design with a rugged duplex frame and low-thermal-resistance Al2O3 substrate. The module has a 650 V collector-emitter voltage rating, 75 A continuous collector current, and 150 A peak current. It operates at a maximum junction temperature of 175 °C with 275 W power dissipation. An NTC thermistor with 5.00 kΩ resistance at 25 °C provides temperature feedback. The module complies with UL 94 V-0 and is rated for 2.5 kV RMS isolation. Mounting torque is 8.00-9.00 Nm for M6 screws. Its stray inductance is 35 nH, and thermal resistance from junction to heatsink is 0.45 K/W for the IGBT and 0.60 K/W for the diode. Weight is 34 g.

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Sheung Wan, Hong Kong
IGBT Modules
FS75R07U1E4
IGBT Modules FS75R07U1E4
IGBT Modules

IGBT Modules

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FS75R07U1E4
Product Name IGBT Modules
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