Infineon Technologies AG IGBT Modules FS50R12KT3

Description
IGBT Modules N-CH 1.2KV 75A
Description
IGBT Modules N-CH 1.2KV 75A
Datasheet
Datasheet Summary
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The FS50R12KT3 is an EconoPACK™2 IGBT module for inverter applications, featuring a fast trench/fieldstop IGBT3 and emitter-controlled high-efficiency diode. It is rated for a collector-emitter voltage of 1200 V and a continuous collector current of 50 A, with a maximum power dissipation of 280 W. The module has a copper baseplate, isolated with AI203 material, and a thermal resistance from junction to case of 0.092 K/W for the IGBT and 0.184 K/W for the diode. It measures 106.5 mm x 60 mm and is designed for mounting with M5 screws at a torque of 3.00 to 6.00 Nm. The module includes an NTC thermistor for temperature monitoring and meets IEC 61140 isolation standards.

Datasheet Summary
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The FS50R12KT3 is an EconoPACK™2 IGBT module for inverter applications, featuring a fast trench/fieldstop IGBT3 and emitter-controlled high-efficiency diode. It is rated for a collector-emitter voltage of 1200 V and a continuous collector current of 50 A, with a maximum power dissipation of 280 W. The module has a copper baseplate, isolated with AI203 material, and a thermal resistance from junction to case of 0.092 K/W for the IGBT and 0.184 K/W for the diode. It measures 106.5 mm x 60 mm and is designed for mounting with M5 screws at a torque of 3.00 to 6.00 Nm. The module includes an NTC thermistor for temperature monitoring and meets IEC 61140 isolation standards.

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Sheung Wan, Hong Kong
IGBT Modules
FS50R12KT3
IGBT Modules FS50R12KT3
IGBT Modules N-CH 1.2KV 75A

IGBT Modules N-CH 1.2KV 75A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FS50R12KT3
Product Name IGBT Modules
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