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Infineon Technologies AG IGBT Modules FS100R07N2E4

Description
EconoPACK™ 2 650 V, 100 A sixpack IGBT module with low sat and fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available as variation with PressFIT mounting technology: FS100R07N2E4_B11 Summary of Features Increased blocking voltage capability to 650 V High short circuit capability Self limiting short circuit current Tvj op = 150°C Integrated NTC temperature sensor Copper base plate Solder Contact Technology Standard housing Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Potential Applications Designers who used this product also designed with DF16MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules BTS5200-1ENA | PROFET™ + 12V | Automotive Smart High-Side Switch FS75R17W2E4P_B11 | IGBT Modules IPD320N20N3 G | N-Channel Power MOSFET DDB6U50N22W1RP_B11 | Bridge Rectifier & AC-Switches DF160R12W2H3F_B11 | IGBT Modules TT175N16SOF | Thyristor / Diode Modules ETT580N16P60 | Thyristor / Diode Modules 1ED44176N01F | Gate Driver ICs 1EDI20I12MF | Gate Driver ICs XMC4200-F64K256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 XMC4200-F64F256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 DF11MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules DDB6U75N16W1R_B11 | Bridge Rectifier & AC-Switches FF900R12IP4D | IGBT Modules 1ED020I12-F2 | Gate Driver ICs ICE5ASAG | PWM-FF (fixed frequency) Flyback ICs DF14MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules BTS3028SDL | Classic HITFET™ 24V | Automotive Low-Side Switch FF500R17KE4 | IGBT Modules DF16MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules BTS5200-1ENA | PROFET™ + 12V | Automotive Smart High-Side Switch FS75R17W2E4P_B11 | IGBT Modules IPD320N20N3 G | N-Channel Power MOSFET DDB6U50N22W1RP_B11 | Bridge Rectifier & AC-Switches DF160R12W2H3F_B11 | IGBT Modules TT175N16SOF | Thyristor / Diode Modules ETT580N16P60 | Thyristor / Diode Modules 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FS100R07N2E4 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FS100R07N2E4
IGBT Modules FS100R07N2E4
EconoPACK™ 2 650 V, 100 A sixpack IGBT module with low sat and fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available as variation with PressFIT mounting technology: FS100R07N2E4_B11 Summary of Features Increased blocking voltage capability to 650 V High short circuit capability Self limiting short circuit current Tvj op = 150°C Integrated NTC temperature sensor Copper base plate Solder Contact Technology Standard housing Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Potential Applications Designers who used this product also designed with DF16MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules BTS5200-1ENA | PROFET™ + 12V | Automotive Smart High-Side Switch FS75R17W2E4P_B11 | IGBT Modules IPD320N20N3 G | N-Channel Power MOSFET DDB6U50N22W1RP_B11 | Bridge Rectifier & AC-Switches DF160R12W2H3F_B11 | IGBT Modules TT175N16SOF | Thyristor / Diode Modules ETT580N16P60 | Thyristor / Diode Modules 1ED44176N01F | Gate Driver ICs 1EDI20I12MF | Gate Driver ICs XMC4200-F64K256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 XMC4200-F64F256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 DF11MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules DDB6U75N16W1R_B11 | Bridge Rectifier & AC-Switches FF900R12IP4D | IGBT Modules 1ED020I12-F2 | Gate Driver ICs ICE5ASAG | PWM-FF (fixed frequency) Flyback ICs DF14MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules BTS3028SDL | Classic HITFET™ 24V | Automotive Low-Side Switch FF500R17KE4 | IGBT Modules DF16MR12W1M1HF_B67 | Silicon Carbide CoolSiC™ MOSFET Modules BTS5200-1ENA | PROFET™ + 12V | Automotive Smart High-Side Switch FS75R17W2E4P_B11 | IGBT Modules IPD320N20N3 G | N-Channel Power MOSFET DDB6U50N22W1RP_B11 | Bridge Rectifier & AC-Switches DF160R12W2H3F_B11 | IGBT Modules TT175N16SOF | Thyristor / Diode Modules ETT580N16P60 | Thyristor / Diode Modules 1 2 3 4 5

EconoPACK™ 2 650 V, 100 A sixpack IGBT module with low sat and fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC. Also available as variation with PressFIT mounting technology: FS100R07N2E4_B11


Summary of Features

  • Increased blocking voltage capability to 650 V
  • High short circuit capability
  • Self limiting short circuit current
  • Tvj op = 150°C
  • Integrated NTC temperature sensor
  • Copper base plate
  • Solder Contact Technology
  • Standard housing

Benefits

  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility

Potential Applications


Designers who used this product also designed with


  • DF16MR12W1M1HF_B67 |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • BTS5200-1ENA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • FS75R17W2E4P_B11 |
    IGBT Modules
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • DDB6U50N22W1RP_B11 |
    Bridge Rectifier & AC-Switches
  • DF160R12W2H3F_B11 |
    IGBT Modules
  • TT175N16SOF |
    Thyristor / Diode Modules
  • ETT580N16P60 |
    Thyristor / Diode Modules
  • 1ED44176N01F |
    Gate Driver ICs
  • 1EDI20I12MF |
    Gate Driver ICs
  • XMC4200-F64K256 BA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • XMC4200-F64F256 BA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • DF11MR12W1M1HF_B67 |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • DDB6U75N16W1R_B11 |
    Bridge Rectifier & AC-Switches
  • FF900R12IP4D |
    IGBT Modules
  • 1ED020I12-F2 |
    Gate Driver ICs
  • ICE5ASAG |
    PWM-FF (fixed frequency) Flyback ICs
  • DF14MR12W1M1HF_B67 |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • BTS3028SDL |
    Classic HITFET™ 24V | Automotive Low-Side Switch
  • FF500R17KE4 |
    IGBT Modules
  • DF16MR12W1M1HF_B67 |
    Silicon Carbide CoolSiC™ MOSFET Modules
  • BTS5200-1ENA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • FS75R17W2E4P_B11 |
    IGBT Modules
  • IPD320N20N3 G |
    N-Channel Power MOSFET
  • DDB6U50N22W1RP_B11 |
    Bridge Rectifier & AC-Switches
  • DF160R12W2H3F_B11 |
    IGBT Modules
  • TT175N16SOF |
    Thyristor / Diode Modules
  • ETT580N16P60 |
    Thyristor / Diode Modules

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Supplier's Site Datasheet
 - 8386822 - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK^TM2/EconoP ACK^TM3/EconoPACK^TM 4 Transistor Configuration = 3 Phase Configuration = 3 Phase Bridge Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Channel Type = N Mounting Type = PCB Mount Package Type = ECONO2 Pin Count = 28 Switching Speed = 1MHz

The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP ^TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACK^TM2/EconoPACK^TM3/EconoPACK^TM4
Transistor Configuration = 3 Phase
Configuration = 3 Phase Bridge
Maximum Continuous Collector Current = 100 A
Maximum Collector Emitter Voltage = 650 V
Maximum Gate Emitter Voltage = ±20V
Channel Type = N
Mounting Type = PCB Mount
Package Type = ECONO2
Pin Count = 28
Switching Speed = 1MHz

Supplier's Site
Sheung Wan, Hong Kong
IGBT Modules
FS100R07N2E4
IGBT Modules FS100R07N2E4
IGBT Modules IGBT Module 100A 650V

IGBT Modules IGBT Module 100A 650V

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FS100R07N2E4 8386822 FS100R07N2E4
Product Name IGBT Modules IGBT Modules
VCES 650 volts
VCE(on) 1.55 volts
IC(max) 100 amps 100 amps
Package Type AG-ECONO2B ECONO2
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