Infineon Technologies AG IGBT Modules FP50R12KT4G_B15

Description
IGBT Modules IGBT Module 50A 1200V
Description
IGBT Modules IGBT Module 50A 1200V
Datasheet
Datasheet Summary
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The FP50R12KT4G_B15 is an EconoPIM™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode, designed for auxiliary inverters and drive systems. It features a copper base plate, solder contact technology, and an integrated NTC temperature sensor. The IGBT has a collector-emitter voltage rating of 1200 V, a nominal collector current of 50 A, and a peak collector current of 100 A. The maximum junction temperature is 175 °C, and the operating junction temperature range is -40 °C to 150 °C. The module meets UL 94 V-0 flammability standard and is UL-approved (E83335). Its package dimensions are standardized, with a 10.0 mm creepage distance between terminals and a 7.5 mm distance to the heatsink. The module weighs 300 g.

Datasheet Summary
Powered by GS/AI

The FP50R12KT4G_B15 is an EconoPIM™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode, designed for auxiliary inverters and drive systems. It features a copper base plate, solder contact technology, and an integrated NTC temperature sensor. The IGBT has a collector-emitter voltage rating of 1200 V, a nominal collector current of 50 A, and a peak collector current of 100 A. The maximum junction temperature is 175 °C, and the operating junction temperature range is -40 °C to 150 °C. The module meets UL 94 V-0 flammability standard and is UL-approved (E83335). Its package dimensions are standardized, with a 10.0 mm creepage distance between terminals and a 7.5 mm distance to the heatsink. The module weighs 300 g.

Suppliers

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Product
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Sheung Wan, Hong Kong
IGBT Modules
FP50R12KT4G_B15
IGBT Modules FP50R12KT4G_B15
IGBT Modules IGBT Module 50A 1200V

IGBT Modules IGBT Module 50A 1200V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FP50R12KT4G_B15
Product Name IGBT Modules
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