Infineon Technologies AG IGBT Modules FP50R06KE3

Description
IGBT Modules N-CH 600V 60A
Description
IGBT Modules N-CH 600V 60A
Datasheet
Datasheet Summary
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The FP50R06KE3 is an EconoPIM™2 module containing a 600 V IGBT and an emitter-controlled diode, designed for inverter and brake-chopper applications. It has a maximum collector current of 100 A at 175°C junction temperature and a total power dissipation of 190 W. The module is housed in a baseplate-mounted package with a base plate made of copper and features an aluminum oxide insulator with a creepage distance of 10.0 mm and a clearance of 7.5 mm. It meets the IEC 60747-16 standard for isolation. The junction-to-case thermal resistance for the IGBT is 0.35 K/W, and for the diode, it is 1.0 K/W. The module weighs 180 g and has a mounting torque specification of 3.00-6.00 Nm for M5 screws. Operating junction temperature ranges from -40°C to 150°C.

Datasheet Summary
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The FP50R06KE3 is an EconoPIM™2 module containing a 600 V IGBT and an emitter-controlled diode, designed for inverter and brake-chopper applications. It has a maximum collector current of 100 A at 175°C junction temperature and a total power dissipation of 190 W. The module is housed in a baseplate-mounted package with a base plate made of copper and features an aluminum oxide insulator with a creepage distance of 10.0 mm and a clearance of 7.5 mm. It meets the IEC 60747-16 standard for isolation. The junction-to-case thermal resistance for the IGBT is 0.35 K/W, and for the diode, it is 1.0 K/W. The module weighs 180 g and has a mounting torque specification of 3.00-6.00 Nm for M5 screws. Operating junction temperature ranges from -40°C to 150°C.

Suppliers

Company
Product
Description
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Sheung Wan, Hong Kong
IGBT Modules
FP50R06KE3
IGBT Modules FP50R06KE3
IGBT Modules N-CH 600V 60A

IGBT Modules N-CH 600V 60A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FP50R06KE3
Product Name IGBT Modules
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