Infineon Technologies AG IGBT Modules FP35R12KT4_B11

Description
EconoPIM™2 1200 V, 35 A three-phase IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Summary of Features Low Switching Losses Low VCEsat Tvj op = 150°C VCEsat with positive Temperature Coefficient High Power and Thermal Cycling Capability Integrated NTC temperature sensor Copper Base Plate Standard Housing Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Applications Motor Control
  • IGBT Modules - FP35R12KT4_B11 - Infineon Technologies AG
    Infineon Technologies AG
  • IGBT Module - 60544847 - Radwell International
    Radwell International
Request a Quote Datasheet
Description
EconoPIM™2 1200 V, 35 A three-phase IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Summary of Features Low Switching Losses Low VCEsat Tvj op = 150°C VCEsat with positive Temperature Coefficient High Power and Thermal Cycling Capability Integrated NTC temperature sensor Copper Base Plate Standard Housing Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Applications Motor Control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FP35R12KT4_B11 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FP35R12KT4_B11
IGBT Modules FP35R12KT4_B11
EconoPIM™2 1200 V, 35 A three-phase IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Summary of Features Low Switching Losses Low VCEsat Tvj op = 150°C VCEsat with positive Temperature Coefficient High Power and Thermal Cycling Capability Integrated NTC temperature sensor Copper Base Plate Standard Housing Benefits Compact module concept Optimized customer’s development cycle time and cost Configuration flexibility Applications Motor Control

EconoPIM™2 1200 V, 35 A three-phase IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology.


Summary of Features

  • Low Switching Losses
  • Low VCEsat
  • Tvj op = 150°C
  • VCEsat with positive Temperature Coefficient
  • High Power and Thermal Cycling Capability
  • Integrated NTC temperature sensor
  • Copper Base Plate
  • Standard Housing

Benefits

  • Compact module concept
  • Optimized customer’s development cycle time and cost
  • Configuration flexibility

Applications

  • Motor Control
Supplier's Site Datasheet
IGBT Module - 60544847 - Radwell International
Radwell International
Willingboro, NJ, United States
IGBT Module
60544847
IGBT Module 60544847
DISCONTINUED BY MANUFACTURER, IGBT MODULE, 35 AMP, 1200V, THREE PHASE INVERTER, CHASSIS MOUNT, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, IGBT MODULE, 35 AMP, 1200V, THREE PHASE INVERTER, CHASSIS MOUNT, ROHS3 COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Modules
FP35R12KT4_B11
IGBT Modules FP35R12KT4_B11
IGBT Modules IGBT-MODULE

IGBT Modules IGBT-MODULE

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Radwell International VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FP35R12KT4_B11 60544847 FP35R12KT4_B11
Product Name IGBT Modules IGBT Module IGBT Modules
VCE(on) 1.85 volts
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