EasyPIM™ 2B 1200 V, 25 A reverse conducting PIM IGBT module with fast Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology. Also available with Thermal Interface Material or as variation with soldering connection technology: FP25R12W2T4.
Smaller inverter size can be realized by replacing with the FP25R12W1T7_B11 an EasyPIM™1B module with TRENCHSTOP™ IGBT7.
Summary of Features
Benefits
Applications
INSULATED GATE BIPOLAR TRANSISTOR, 39A I(C), 1200V V(BR)CES, N-CHANNEL. FREE 2 YEAR RADWELL WARRANTY
IGBT Module; Continuous Collector Current:25A; Power Dissipation:175W; Operating Temperature Max:150°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV; Product Range:- RoHS Compliant: Yes
| Infineon Technologies AG | Radwell International | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FP25R12W2T4_B11 | 120914234 | 84R7205 |
| Product Name | Power - IGBT - IGBT Modules - FP25R12W2T4_B11 | IGBT Module | Igbt Module; Continuous Collector Current Infineon |
| VCE(on) | 1.85 volts | ||
| IC(max) | 25 amps | ||
| Package Type | AG-EASY2B | TO-3 | |
| Packing Method | Tray; TRAY |