FP200R12N3T7 is an EconoPIM™3 module for three-phase inverter applications, integrating TRENCHSTOP™ IGBT7 transistors and emitter-controlled diodes with an NTC thermistor. It features a copper base plate and Al₂O₃ DCB substrate for low thermal impedance, with a rated collector-emitter voltage of 1200 V and continuous collector current of 200 A at 175 °C. Peak collector current is 400 A, and gate-emitter peak voltage is ±20 V. The module supports overload operation up to 175 °C and has 2.5 kV AC insulation withstand for 1 minute. It measures 300 g in mass and complies with IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications.
EconoPIM™ 3 1200 V, 200 A three phase PIM IGBT module with TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with integration of rectifier and brake chopper enables system cost savings.
Summary of Features
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FP200R12N3T7 |
| Product Name | IGBT Modules |
| VCES | 1200 volts |
| VCE(on) | 1.55 volts |
| IC(max) | 200 amps |
