Infineon Technologies AG IGBT Modules FP150R07N3E4

Description
IGBT Modules IGBT Module 150A 650V
Description
IGBT Modules IGBT Module 150A 650V
Datasheet
Datasheet Summary
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The FP150R07N3E4 is an EconoPIM™3 module with trench/fieldstop IGBT4 and emitter-controlled diode, designed for motor drives and inverter applications. It features a copper base plate, solder contact technology, and an integrated NTC temperature sensor. The module has a maximum collector-emitter voltage of 650 V, a continuous collector current of 150 A at 55°C, and a peak collector current of 300 A. It supports a maximum junction temperature of 175°C and has a total power dissipation of 430 W. The gate-emitter voltage is rated at ±20 V, and the module meets UL 94 V-0 flammability standard and is UL-approved (E83335). The package measures 100 mm × 62 mm with a height of 25 mm.

Datasheet Summary
Powered by GS/AI

The FP150R07N3E4 is an EconoPIM™3 module with trench/fieldstop IGBT4 and emitter-controlled diode, designed for motor drives and inverter applications. It features a copper base plate, solder contact technology, and an integrated NTC temperature sensor. The module has a maximum collector-emitter voltage of 650 V, a continuous collector current of 150 A at 55°C, and a peak collector current of 300 A. It supports a maximum junction temperature of 175°C and has a total power dissipation of 430 W. The gate-emitter voltage is rated at ±20 V, and the module meets UL 94 V-0 flammability standard and is UL-approved (E83335). The package measures 100 mm × 62 mm with a height of 25 mm.

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Sheung Wan, Hong Kong
IGBT Modules
FP150R07N3E4
IGBT Modules FP150R07N3E4
IGBT Modules IGBT Module 150A 650V

IGBT Modules IGBT Module 150A 650V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FP150R07N3E4
Product Name IGBT Modules
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