EconoDUAL™3 module with 1200 V TRENCHSTOP™ IGBT7 and emitter controlled diode, rated for 900 A continuous and 1800 A peak collector current. Features an isolated copper baseplate with PressFIT contact technology, integrated NTC temperature sensor, and direct liquid cooling capability. Physical dimensions are 120.83 mm x 52.74 mm x 28.75 mm, weighing 345 g. Supports junction operating temperatures up to 175 °C. Complies with IEC 60747, IEC 60749, and IEC 60068 for industrial applications.
EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC, PressFIT contact technology and wave structure on the base plate.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FF900R12ME7W_B11 |
| Product Name | IGBT Modules |
| VCES | 1200 volts |
| VCE(on) | 1.5 volts |
| IC(max) | 900 amps |