Infineon Technologies AG IGBT Modules FF900R12IP4D

Description
IGBT Modules N-CH 1.2KV 900A
Description
IGBT Modules N-CH 1.2KV 900A
Datasheet
Datasheet Summary
Powered by GS/AI

The FF900R12IP4D is a PrimePACK™2 IGBT module with a 1200 V collector-emitter voltage rating and a 900 A continuous collector current, designed for high-power applications such as motor drives, traction systems, and wind turbines. It integrates Trench/Fieldstop IGBT4 technology and an enlarged Emitter Controlled diode with a built-in NTC thermistor for temperature monitoring. The module uses a Cu baseplate and aluminum oxide insulation, with a 33.0 mm creepage distance and 19.0 mm clearance. It offers a 4 kV AC insulation test voltage, a thermal resistance of 0.15 K/W from junction to case, and a package weight of 825 g. The device meets AEC-Q200 and RoHS standards.

Datasheet Summary
Powered by GS/AI

The FF900R12IP4D is a PrimePACK™2 IGBT module with a 1200 V collector-emitter voltage rating and a 900 A continuous collector current, designed for high-power applications such as motor drives, traction systems, and wind turbines. It integrates Trench/Fieldstop IGBT4 technology and an enlarged Emitter Controlled diode with a built-in NTC thermistor for temperature monitoring. The module uses a Cu baseplate and aluminum oxide insulation, with a 33.0 mm creepage distance and 19.0 mm clearance. It offers a 4 kV AC insulation test voltage, a thermal resistance of 0.15 K/W from junction to case, and a package weight of 825 g. The device meets AEC-Q200 and RoHS standards.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
IGBT Modules
FF900R12IP4D
IGBT Modules FF900R12IP4D
IGBT Modules N-CH 1.2KV 900A

IGBT Modules N-CH 1.2KV 900A

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF900R12IP4D
Product Name IGBT Modules
Unlock Full Specs
to access all available technical data