Infineon Technologies AG IGBTs - Modules - FF900R12IE4 FF900R12IE4

Description
Manufacturer: Infineon Technologies Industrial Power and Controls Americas Win Source Part Number: 084366-FF900R12IE4 Mounting: Chassis Mount Configuration: Single Input: Standard IGBT Type: Trench Input Capacitance (Cies) @ Vce: 54nF @ 25V NTC Thermistor: Yes Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: Module Maximum Current Collector: 900A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Collector Cut-off Current(Max): 5mA Maximum Power Dissipation: 5.1W Collector-emitter saturation voltage(Max): 2.05V @ 15V, 900A Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
  • IGBTs - Modules - FF900R12IE4 - 084366-FF900R12IE4 - Win Source Electronics
    Win Source Electronics
  • Transistor - 24728982 - Radwell International
    Radwell International
  • Igbt Module; Continuous Collector Current Infineon - 84R7189 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Transistors - FF900R12IE4 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Industrial Power and Controls Americas Win Source Part Number: 084366-FF900R12IE4 Mounting: Chassis Mount Configuration: Single Input: Standard IGBT Type: Trench Input Capacitance (Cies) @ Vce: 54nF @ 25V NTC Thermistor: Yes Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: Module Maximum Current Collector: 900A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Collector Cut-off Current(Max): 5mA Maximum Power Dissipation: 5.1W Collector-emitter saturation voltage(Max): 2.05V @ 15V, 900A Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBTs - Modules - FF900R12IE4 - 084366-FF900R12IE4 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Modules - FF900R12IE4
084366-FF900R12IE4
IGBTs - Modules - FF900R12IE4 084366-FF900R12IE4
Manufacturer: Infineon Technologies Industrial Power and Controls Americas Win Source Part Number: 084366-FF900R12IE4 Mounting: Chassis Mount Configuration: Single Input: Standard IGBT Type: Trench Input Capacitance (Cies) @ Vce: 54nF @ 25V NTC Thermistor: Yes Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: Module Maximum Current Collector: 900A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Collector Cut-off Current(Max): 5mA Maximum Power Dissipation: 5.1W Collector-emitter saturation voltage(Max): 2.05V @ 15V, 900A Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies Industrial Power and Controls Americas
Win Source Part Number: 084366-FF900R12IE4
Mounting: Chassis Mount
Configuration: Single
Input: Standard
IGBT Type: Trench
Input Capacitance (Cies) @ Vce: 54nF @ 25V
NTC Thermistor: Yes
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: Module
Maximum Current Collector: 900A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Collector Cut-off Current(Max): 5mA
Maximum Power Dissipation: 5.1W
Collector-emitter saturation voltage(Max): 2.05V @ 15V, 900A
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
1200V 900A IGBT Transistor
297-FF900R12IE4
1200V 900A IGBT Transistor 297-FF900R12IE4
IGBT Modules IGBT 1200V 900A Product overview: FF900R12IE4 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 900A. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 900A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF900R12IE4 can be used for catalog matching and distributor lookup.

IGBT Modules IGBT 1200V 900A Product overview: FF900R12IE4 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 900A. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 900A. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF900R12IE4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 24728982 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
24728982
Transistor 24728982
IGBT MODULE, TRANSISTOR POLARITY: N CHANNEL, DC COLLECTOR CURRENT: 900A, COLLECTOR EMITTER VOLTAGE VCES: 1.2KV, POWER DISSIPATION PD: 5.1KW, NO. OF PINS:1. FREE 2 YEAR RADWELL WARRANTY

IGBT MODULE, TRANSISTOR POLARITY: N CHANNEL, DC COLLECTOR CURRENT: 900A, COLLECTOR EMITTER VOLTAGE VCES: 1.2KV, POWER DISSIPATION PD: 5.1KW, NO. OF PINS:1. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Igbt Module; Continuous Collector Current Infineon - 84R7189 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Igbt Module; Continuous Collector Current Infineon
84R7189
Igbt Module; Continuous Collector Current Infineon 84R7189
IGBT Module; Continuous Collector Current:900A; Power Dissipation:5.1kW; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:1.2kV; Product Range:- RoHS Compliant: Yes

IGBT Module; Continuous Collector Current:900A; Power Dissipation:5.1kW; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:1.2kV; Product Range:- RoHS Compliant: Yes

Supplier's Site
Transistors - FF900R12IE4 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FF900R12IE4
Transistors FF900R12IE4
IGBT Modules IGBT 1200V 900A

IGBT Modules IGBT 1200V 900A

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
IGBT Modules
FF900R12IE4
IGBT Modules FF900R12IE4
IGBT Modules IGBT 1200V 900A

IGBT Modules IGBT 1200V 900A

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International Newark, An Avnet Company ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) RF Transistors Insulated Gate Bipolar Transistors (IGBT) Transistors Insulated Gate Bipolar Transistors (IGBT)
Product Number 084366-FF900R12IE4 297-FF900R12IE4 24728982 84R7189 FF900R12IE4 FF900R12IE4
Product Name IGBTs - Modules - FF900R12IE4 1200V 900A IGBT Transistor Transistor Igbt Module; Continuous Collector Current Infineon Transistors IGBT Modules
VCE(on) 2.05 volts
Unlock Full Specs
to access all available technical data