Infineon Technologies AG IGBT Modules FF800R12KE7

62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode. Summary of Features Highest power density Best-in-class VCE,sat Tvj op = 175 °C overload High Creepage and Clearance Distances RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA Certification with UL1557 E83336 Benefits Existing packages with higher current capability, allows to increase inverter output power with same frame size Highest power density Avoidance of paralleling of IGBT modules Reduced system costs by simplification of the inverter systems Flexibility Highest reliability Applications 48 V intermediate bus converter (IBC) Central inverter solutions Commercial, construction and agricultural vehicles (CAV) Energy Storage Systems Motor Control Designers who used this product also designed with IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM)