Infineon Technologies AG IGBT Modules FF800R12KE7

Description
62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode. Summary of Features Highest power density Best-in-class VCE,sat Tvj op = 175 °C overload High Creepage and Clearance Distances RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA Certification with UL1557 E83336 Benefits Existing packages with higher current capability, allows to increase inverter output power with same frame size Highest power density Avoidance of paralleling of IGBT modules Reduced system costs by simplification of the inverter systems Flexibility Highest reliability Applications 48 V intermediate bus converter (IBC) Central inverter solutions Commercial, construction and agricultural vehicles (CAV) Energy Storage Systems Motor Control Designers who used this product also designed with IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM)
  • IGBT Modules - FF800R12KE7 - Infineon Technologies AG
    Infineon Technologies AG
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Description
62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode. Summary of Features Highest power density Best-in-class VCE,sat Tvj op = 175 °C overload High Creepage and Clearance Distances RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA Certification with UL1557 E83336 Benefits Existing packages with higher current capability, allows to increase inverter output power with same frame size Highest power density Avoidance of paralleling of IGBT modules Reduced system costs by simplification of the inverter systems Flexibility Highest reliability Applications 48 V intermediate bus converter (IBC) Central inverter solutions Commercial, construction and agricultural vehicles (CAV) Energy Storage Systems Motor Control Designers who used this product also designed with IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM)
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Datasheet
Datasheet Summary
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FF800R12KE7 is a 62 mm C-Series IGBT module featuring TRENCHSTOP IGBT7 and emitter-controlled diodes for high-power inverter applications. It has a collector-emitter voltage rating of 1200 V and a continuous collector current of 800 A, with a peak repetitive current of 1600 A. The module includes an insulated base plate, 4 kV AC 1-minute insulation, creepage and clearance distances of 29.0 mm and 23.0 mm respectively, and a package material with CTI > 400. Operating junction temperature ranges from -40 °C to 175 °C. Thermal resistance from junction to case is 0.0483 K/W for the IGBT and 0.0892 K/W for the diode. The device complies with IEC 60747, IEC 60749, and IEC 60068 for industrial applications.

Datasheet Summary
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FF800R12KE7 is a 62 mm C-Series IGBT module featuring TRENCHSTOP IGBT7 and emitter-controlled diodes for high-power inverter applications. It has a collector-emitter voltage rating of 1200 V and a continuous collector current of 800 A, with a peak repetitive current of 1600 A. The module includes an insulated base plate, 4 kV AC 1-minute insulation, creepage and clearance distances of 29.0 mm and 23.0 mm respectively, and a package material with CTI > 400. Operating junction temperature ranges from -40 °C to 175 °C. Thermal resistance from junction to case is 0.0483 K/W for the IGBT and 0.0892 K/W for the diode. The device complies with IEC 60747, IEC 60749, and IEC 60068 for industrial applications.

Suppliers

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Product
Description
Supplier Links
IGBT Modules - FF800R12KE7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FF800R12KE7
IGBT Modules FF800R12KE7
62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode. Summary of Features Highest power density Best-in-class VCE,sat Tvj op = 175 °C overload High Creepage and Clearance Distances RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA Certification with UL1557 E83336 Benefits Existing packages with higher current capability, allows to increase inverter output power with same frame size Highest power density Avoidance of paralleling of IGBT modules Reduced system costs by simplification of the inverter systems Flexibility Highest reliability Applications 48 V intermediate bus converter (IBC) Central inverter solutions Commercial, construction and agricultural vehicles (CAV) Energy Storage Systems Motor Control Designers who used this product also designed with IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM) IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes FM24CL16B-GTR | F-RAM (Ferroelectric RAM) FM25W256-G | F-RAM (Ferroelectric RAM)

62 mm 1200 V, 800 A dual low sat & fast trench IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled 7 diode.


Summary of Features

  • Highest power density
  • Best-in-class VCE,sat
  • Tvj op = 175 °C overload
  • High Creepage and Clearance Distances
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • UL/CSA Certification with UL1557 E83336

Benefits

  • Existing packages with higher current capability, allows to increase inverter output power with same frame size
  • Highest power density
  • Avoidance of paralleling of IGBT modules
  • Reduced system costs by simplification of the inverter systems
  • Flexibility
  • Highest reliability

Applications

  • 48 V intermediate bus converter (IBC)
  • Central inverter solutions
  • Commercial, construction and agricultural vehicles (CAV)
  • Energy Storage Systems
  • Motor Control

Designers who used this product also designed with


  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • FM24CL16B-GTR |
    F-RAM (Ferroelectric RAM)
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • FM24CL16B-GTR |
    F-RAM (Ferroelectric RAM)
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • FM24CL16B-GTR |
    F-RAM (Ferroelectric RAM)
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF800R12KE7
Product Name IGBT Modules
VCES 1200 volts
VCE(on) 1.5 volts
IC(max) 800 amps
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