EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC and PressFIT contact technology.
Summary of Features
Low VCE,sat
Enlarged diode
Reduced VF and RthJC of the diode
Tvj op = 175 °C overload
Optimized switching losses
Enhanced controllability of dv/dt
Improved diode softness and Erec
Enhanced comic ray robustness
Improved terminals
PressFIT control pins and screw power terminals
Integrated NTC temperature sensor
Isolated baseplate
Compact and robust design with molded terminals
Benefits
Increased power density for VF-demanding applications
Avoidance of paralleling of IGBT modules
Reduced system costs by simplification of the inverter systems
Easy and most reliable assembly
Applications
Motor control and drives
Power transmission and distribution
Wind
Designers who used this product also designed with
FP50R12N2T7P | IGBT Modules
FF1400R17IP4 | IGBT Modules
IPD50N06S4L-08 | Automotive MOSFET
FS50R12N2T7_B15 | IGBT Modules
FF450R12KE7 | IGBT Modules
TT190N16SOF | Thyristor / Diode Modules
XMC4200-F64F256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
FF450R12KE7_E | IGBT Modules
DD104N18K | Thyristor / Diode Modules
1EDI2002AS | Gate Driver ICs
FF600R12KE4 | IGBT Modules
ETT580N16P60 | Thyristor / Diode Modules
BAT165 | Schottky Diodes
FF600R12KE7 | IGBT Modules
BSS123N | Small Signal/Small Power MOSFET
FP75R12N3T7 | IGBT Modules
FP75R12N3T7_B11 | IGBT Modules
BSS308PE | Small Signal/Small Power MOSFET
DDB6U50N22W1RP_B11 | Bridge Rectifier & AC-Switches
BSS84P | Small Signal/Small Power MOSFET
FP50R12N2T7P | IGBT Modules
FF1400R17IP4 | IGBT Modules
IPD50N06S4L-08 | Automotive MOSFET
FS50R12N2T7_B15 | IGBT Modules
FF450R12KE7 | IGBT Modules
TT190N16SOF | Thyristor / Diode Modules
XMC4200-F64F256 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
FF450R12KE7_E | IGBT Modules
1 2 3 4 5
EconoDUAL™ 3 1700 V, 750 A dual TRENCHSTOP™ IGBT7 module with enlarged emitter controlled 7 diode, NTC and PressFIT contact technology.
Summary of Features
- Low VCE,sat
- Enlarged diode
- Reduced VF and RthJC of the diode
- Tvj op = 175 °C overload
- Optimized switching losses
- Enhanced controllability of dv/dt
- Improved diode softness and Erec
- Enhanced comic ray robustness
- Improved terminals
- PressFIT control pins and screw power terminals
- Integrated NTC temperature sensor
- Isolated baseplate
- Compact and robust design with molded terminals
Benefits
- Increased power density for VF-demanding applications
- Avoidance of paralleling of IGBT modules
- Reduced system costs by simplification of the inverter systems
- Easy and most reliable assembly
Applications
- Motor control and drives
- Power transmission and distribution
- Wind
Designers who used this product also designed with
- FP50R12N2T7P |
IGBT Modules
- FF1400R17IP4 |
IGBT Modules
- IPD50N06S4L-08 |
Automotive MOSFET
- FS50R12N2T7_B15 |
IGBT Modules
- FF450R12KE7 |
IGBT Modules
- TT190N16SOF |
Thyristor / Diode Modules
- XMC4200-F64F256 BA |
32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
- FF450R12KE7_E |
IGBT Modules
- DD104N18K |
Thyristor / Diode Modules
- 1EDI2002AS |
Gate Driver ICs
- FF600R12KE4 |
IGBT Modules
- ETT580N16P60 |
Thyristor / Diode Modules
- BAT165 |
Schottky Diodes
- FF600R12KE7 |
IGBT Modules
- BSS123N |
Small Signal/Small Power MOSFET
- FP75R12N3T7 |
IGBT Modules
- FP75R12N3T7_B11 |
IGBT Modules
- BSS308PE |
Small Signal/Small Power MOSFET
- DDB6U50N22W1RP_B11 |
Bridge Rectifier & AC-Switches
- BSS84P |
Small Signal/Small Power MOSFET
- FP50R12N2T7P |
IGBT Modules
- FF1400R17IP4 |
IGBT Modules
- IPD50N06S4L-08 |
Automotive MOSFET
- FS50R12N2T7_B15 |
IGBT Modules
- FF450R12KE7 |
IGBT Modules
- TT190N16SOF |
Thyristor / Diode Modules
- XMC4200-F64F256 BA |
32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
- FF450R12KE7_E |
IGBT Modules
1
2
3
4
5
