Infineon Technologies AG Power - IGBT - IGBT Modules - FF600R12ME4P_B72 FF600R12ME4P_B72

Description
EconoDUAL™ 3 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Low VCEsat Tvj op = 150°C VCEsat with positive temperature coefficient High power density Isolated base plate Standard housing Benefits Compact modules Easy and most reliable assembly No Plugs and cables required Ideal for low inductive system designs Applications Motor Control Photovoltaic Uninterruptible power supplies (UPS)
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Description
EconoDUAL™ 3 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Low VCEsat Tvj op = 150°C VCEsat with positive temperature coefficient High power density Isolated base plate Standard housing Benefits Compact modules Easy and most reliable assembly No Plugs and cables required Ideal for low inductive system designs Applications Motor Control Photovoltaic Uninterruptible power supplies (UPS)
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Datasheet
Datasheet Summary
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FF600R12ME4P_B72 is a 1200 V, 600 A EconoDUAL™3 module with Trench/Fieldstop IGBT4 and emitter-controlled diodes, including an NTC and pre-applied thermal interface material. The module features a standard housing with an isolated base plate, a maximum junction operating temperature of 150°C, and a module stray inductance of 20 nH. It has a mounting torque specification of 6 Nm for both M5 and M6 screws, a storage temperature range of -40°C to 125°C, and a maximum base plate temperature of 125°C. The module weighs 345 g and meets IEC 60747, IEC 60749, and IEC 60068 qualification standards for industrial applications.

Datasheet Summary
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FF600R12ME4P_B72 is a 1200 V, 600 A EconoDUAL™3 module with Trench/Fieldstop IGBT4 and emitter-controlled diodes, including an NTC and pre-applied thermal interface material. The module features a standard housing with an isolated base plate, a maximum junction operating temperature of 150°C, and a module stray inductance of 20 nH. It has a mounting torque specification of 6 Nm for both M5 and M6 screws, a storage temperature range of -40°C to 125°C, and a maximum base plate temperature of 125°C. The module weighs 345 g and meets IEC 60747, IEC 60749, and IEC 60068 qualification standards for industrial applications.

Suppliers

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Supplier Links
Power - IGBT - IGBT Modules - FF600R12ME4P_B72 - FF600R12ME4P_B72 - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Modules - FF600R12ME4P_B72
FF600R12ME4P_B72
Power - IGBT - IGBT Modules - FF600R12ME4P_B72 FF600R12ME4P_B72
EconoDUAL™ 3 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material. Summary of Features Low VCEsat Tvj op = 150°C VCEsat with positive temperature coefficient High power density Isolated base plate Standard housing Benefits Compact modules Easy and most reliable assembly No Plugs and cables required Ideal for low inductive system designs Applications Motor Control Photovoltaic Uninterruptible power supplies (UPS)

EconoDUAL™ 3 1200 V, 200 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled Diode, NTC and pre-applied Thermal Interface Material.


Summary of Features

  • Low VCEsat
  • Tvj op = 150°C
  • VCEsat with positive temperature coefficient
  • High power density
  • Isolated base plate
  • Standard housing

Benefits

  • Compact modules
  • Easy and most reliable assembly
  • No Plugs and cables required
  • Ideal for low inductive system designs

Applications

  • Motor Control
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF600R12ME4P_B72
Product Name Power - IGBT - IGBT Modules - FF600R12ME4P_B72
VCE(on) 1.75 volts
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