Infineon Technologies AG IGBT Modules FF600R12IE4

Description
PrimePACK™2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and fast switching chip. Summary of Features Extended operation temperature Tvj op High DC stability High short circuit capability, self limiting short circuit current Low switching losses Unbeatable robustness VCEsat with positive temperature coefficient 4 kV AC 1 min insulation Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability Substrate for low thermal resistance UL recognized Benefits High power density Standardized housing Applications Automotive high-voltage battery management system (BMS) Motor Control Traction Uninterruptible power supplies (UPS) Wind Designers who used this product also designed with FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules DZ950N44K | Thyristor / Diode Modules FF650R17IE4 | IGBT modules FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules DZ950N44K | Thyristor / Diode Modules FF650R17IE4 | IGBT modules FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules 1 2
Request a Quote Datasheet
Description
PrimePACK™2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and fast switching chip. Summary of Features Extended operation temperature Tvj op High DC stability High short circuit capability, self limiting short circuit current Low switching losses Unbeatable robustness VCEsat with positive temperature coefficient 4 kV AC 1 min insulation Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability Substrate for low thermal resistance UL recognized Benefits High power density Standardized housing Applications Automotive high-voltage battery management system (BMS) Motor Control Traction Uninterruptible power supplies (UPS) Wind Designers who used this product also designed with FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules DZ950N44K | Thyristor / Diode Modules FF650R17IE4 | IGBT modules FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules DZ950N44K | Thyristor / Diode Modules FF650R17IE4 | IGBT modules FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FF600R12IE4 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FF600R12IE4
IGBT Modules FF600R12IE4
PrimePACK™2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and fast switching chip. Summary of Features Extended operation temperature Tvj op High DC stability High short circuit capability, self limiting short circuit current Low switching losses Unbeatable robustness VCEsat with positive temperature coefficient 4 kV AC 1 min insulation Package with CTI > 400 High creepage and clearance distances High power and thermal cycling capability Substrate for low thermal resistance UL recognized Benefits High power density Standardized housing Applications Automotive high-voltage battery management system (BMS) Motor Control Traction Uninterruptible power supplies (UPS) Wind Designers who used this product also designed with FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules DZ950N44K | Thyristor / Diode Modules FF650R17IE4 | IGBT modules FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules DZ950N44K | Thyristor / Diode Modules FF650R17IE4 | IGBT modules FZ1200R45KL3_B5 | IGBT modules FF450R33T3E3_B5 | IGBT modules DD750S65K3 | IGBT modules 1 2

PrimePACK™2 1200 V, 600 A half-bridge dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode, NTC and fast switching chip.


Summary of Features

  • Extended operation temperature Tvj op
  • High DC stability
  • High short circuit capability, self limiting short circuit current
  • Low switching losses
  • Unbeatable robustness
  • VCEsat with positive temperature coefficient
  • 4 kV AC 1 min insulation
  • Package with CTI > 400
  • High creepage and clearance distances
  • High power and thermal cycling capability
  • Substrate for low thermal resistance
  • UL recognized

Benefits

  • High power density
  • Standardized housing

Applications

  • Automotive high-voltage battery management system (BMS)
  • Motor Control
  • Traction
  • Uninterruptible power supplies (UPS)
  • Wind

Designers who used this product also designed with


  • FZ1200R45KL3_B5 |
    IGBT modules
  • FF450R33T3E3_B5 |
    IGBT modules
  • DD750S65K3 |
    IGBT modules
  • DZ950N44K |
    Thyristor / Diode Modules
  • FF650R17IE4 |
    IGBT modules
  • FZ1200R45KL3_B5 |
    IGBT modules
  • FF450R33T3E3_B5 |
    IGBT modules
  • DD750S65K3 |
    IGBT modules
  • DZ950N44K |
    Thyristor / Diode Modules
  • FF650R17IE4 |
    IGBT modules
  • FZ1200R45KL3_B5 |
    IGBT modules
  • FF450R33T3E3_B5 |
    IGBT modules
  • DD750S65K3 |
    IGBT modules

1
2

Supplier's Site Datasheet
IGBTs - Modules - FF600R12IE4 - 263579-FF600R12IE4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Modules - FF600R12IE4
263579-FF600R12IE4
IGBTs - Modules - FF600R12IE4 263579-FF600R12IE4
Manufacturer: Infineon Technologies Industrial Power and Controls Americas Win Source Part Number: 263579-FF600R12IE4 Mounting: Chassis Mount Configuration: Half Bridge Input: Standard IGBT Type: Trench Field Stop Input Capacitance (Cies) @ Vce: 37nF @ 25V NTC Thermistor: Yes Family Name: FF600R12IE4 Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -40°C to 150°C (TJ) Case / Package: Module Maximum Current Collector: 600A VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V Collector Cut-off Current(Max): 5mA Maximum Power Dissipation: 3.35W Collector-emitter saturation voltage(Max): 2.05V @ 15V, 600A Alternative Parts (Cross-Reference): SEMiX404GB12VS; MG600Q2YS60A; SEMiX453GB12VS; SEMiX703GB126HDs; Introduction Date: October 24, 2007 ECCN: EAR99 Country of Origin: Germany Estimated EOL Date: 2030 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies Industrial Power and Controls Americas
Win Source Part Number: 263579-FF600R12IE4
Mounting: Chassis Mount
Configuration: Half Bridge
Input: Standard
IGBT Type: Trench Field Stop
Input Capacitance (Cies) @ Vce: 37nF @ 25V
NTC Thermistor: Yes
Family Name: FF600R12IE4
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -40°C to 150°C (TJ)
Case / Package: Module
Maximum Current Collector: 600A
VCEO Maximum Collector-Emitter Breakdown Voltage: 1200V
Collector Cut-off Current(Max): 5mA
Maximum Power Dissipation: 3.35W
Collector-emitter saturation voltage(Max): 2.05V @ 15V, 600A
Alternative Parts (Cross-Reference): SEMiX404GB12VS; MG600Q2YS60A; SEMiX453GB12VS; SEMiX703GB126HDs;
Introduction Date: October 24, 2007
ECCN: EAR99
Country of Origin: Germany
Estimated EOL Date: 2030
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
IGBT Transistor 297-FF600R12IE4
IGBT Modules IGBT-MODULE Product overview: FF600R12IE4 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF600R12IE4 can be used for catalog matching and distributor lookup.

IGBT Modules IGBT-MODULE Product overview: FF600R12IE4 from Infineon Technologies is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-FF600R12IE4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
IGBT Modules
FF600R12IE4
IGBT Modules FF600R12IE4
IGBT Modules IGBT-MODULE

IGBT Modules IGBT-MODULE

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number FF600R12IE4 263579-FF600R12IE4 297-FF600R12IE4 FF600R12IE4
Product Name IGBT Modules IGBTs - Modules - FF600R12IE4 IGBT Transistor IGBT Modules
VCE(on) 1.75 volts 2.05 volts
IC(max) 600 amps
Package Type AG-PRIME2 SOT3; Module Tray
Packing Method Tray; TRAY Tray
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