Infineon Technologies AG Power - IGBT - IGBT Modules - FF450R45T3E4_B5 FF450R45T3E4_B5

Description
XHP™ 3 4500 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, emitter controlled diode and with enhanced isolation of 10.4 kV. Summary of Features High DC stability High short-circuit capability Low switching losses Low VCEsat Unbeatable robustness Tvj op=150°C AlSiC base plate for increased TC Package with CTI > 600 Fire & smoke EN45545 R22, R23, R24: HL2 Benefits Low inductive module Enables clean electrical design Enables clean mechanical design Easy set-up of 3-level NPC1 topology Easy set-up of parallel configuration Better scalability, on smaller steps Better match to various power levels Smoother logistic handling and stocking Enables downsizing on system level Applications Commercial, construction and agricultural vehicles (CAV) Motor Control Traction
  • Power - IGBT - IGBT Modules - FF450R45T3E4_B5 - FF450R45T3E4_B5 - Infineon Technologies AG
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Description
XHP™ 3 4500 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, emitter controlled diode and with enhanced isolation of 10.4 kV. Summary of Features High DC stability High short-circuit capability Low switching losses Low VCEsat Unbeatable robustness Tvj op=150°C AlSiC base plate for increased TC Package with CTI > 600 Fire & smoke EN45545 R22, R23, R24: HL2 Benefits Low inductive module Enables clean electrical design Enables clean mechanical design Easy set-up of 3-level NPC1 topology Easy set-up of parallel configuration Better scalability, on smaller steps Better match to various power levels Smoother logistic handling and stocking Enables downsizing on system level Applications Commercial, construction and agricultural vehicles (CAV) Motor Control Traction
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Datasheet
Datasheet Summary
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FF450R45T3E4_B5 is a 4500 V, 450 A dual IGBT module with TRENCHSTOP IGBT4 and emitter-controlled diodes, designed for traction and medium-voltage converters. The module features a 10.4 kV AC insulation rating, an AlSiC base plate, and a housing material compliant with EN45545-2 R23 (HL3). It has a creepage and clearance distance of 53.0 mm and 36.0 mm respectively, with a CTI > 600. The device operates up to 150 °C junction temperature, has a peak repetitive collector current of 900 A, and a gate-emitter voltage rating of ±20 V. The package measures 126.5 mm by 63.5 mm and weighs 700 g.

Datasheet Summary
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FF450R45T3E4_B5 is a 4500 V, 450 A dual IGBT module with TRENCHSTOP IGBT4 and emitter-controlled diodes, designed for traction and medium-voltage converters. The module features a 10.4 kV AC insulation rating, an AlSiC base plate, and a housing material compliant with EN45545-2 R23 (HL3). It has a creepage and clearance distance of 53.0 mm and 36.0 mm respectively, with a CTI > 600. The device operates up to 150 °C junction temperature, has a peak repetitive collector current of 900 A, and a gate-emitter voltage rating of ±20 V. The package measures 126.5 mm by 63.5 mm and weighs 700 g.

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Power - IGBT - IGBT Modules - FF450R45T3E4_B5 - FF450R45T3E4_B5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Modules - FF450R45T3E4_B5
FF450R45T3E4_B5
Power - IGBT - IGBT Modules - FF450R45T3E4_B5 FF450R45T3E4_B5
XHP™ 3 4500 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, emitter controlled diode and with enhanced isolation of 10.4 kV. Summary of Features High DC stability High short-circuit capability Low switching losses Low VCEsat Unbeatable robustness Tvj op=150°C AlSiC base plate for increased TC Package with CTI > 600 Fire & smoke EN45545 R22, R23, R24: HL2 Benefits Low inductive module Enables clean electrical design Enables clean mechanical design Easy set-up of 3-level NPC1 topology Easy set-up of parallel configuration Better scalability, on smaller steps Better match to various power levels Smoother logistic handling and stocking Enables downsizing on system level Applications Commercial, construction and agricultural vehicles (CAV) Motor Control Traction

XHP™ 3 4500 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, emitter controlled diode and with enhanced isolation of 10.4 kV.


Summary of Features

  • High DC stability
  • High short-circuit capability
  • Low switching losses
  • Low VCEsat
  • Unbeatable robustness
  • Tvj op=150°C
  • AlSiC base plate for increased TC
  • Package with CTI > 600
  • Fire & smoke EN45545 R22, R23, R24: HL2

Benefits

  • Low inductive module
  • Enables clean electrical design
  • Enables clean mechanical design
  • Easy set-up of 3-level NPC1 topology
  • Easy set-up of parallel configuration
  • Better scalability, on smaller steps
  • Better match to various power levels
  • Smoother logistic handling and stocking
  • Enables downsizing on system level

Applications

  • Commercial, construction and agricultural vehicles (CAV)
  • Motor Control
  • Traction
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF450R45T3E4_B5
Product Name Power - IGBT - IGBT Modules - FF450R45T3E4_B5
VCES 4500 volts
VCE(on) 2.35 volts
IC(max) 450 amps
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