FF450R33T3E3 is a 3300 V, 450 A IGBT module with integrated emitter-controlled diodes, designed for high-power applications such as motor drives, traction, and UPS systems. It features a base plate made of AlSiC with an isolated design and a module package having a comparative tracking index greater than 600. The device supports a maximum junction temperature of 150°C, a peak collector current of 900 A, and exhibits low switching losses, low V<sub>CEsat</sub> with a positive temperature coefficient, and high short-circuit withstand capability. The package has an internal inductance of 25 nH and a mass of 700 g. It complies with IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications.
XHP™3 3300 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT3 and emitter controlled diode - Designed for flexibility and reliability!
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| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FF450R33T3E3 |
| Product Name | IGBT Modules |
| VCES | 3300 volts |
| VCE(on) | 2.55 volts |
| IC(max) | 450 amps |
