FF450R12ME4P_B11 is a 1200 V, 450 A IGBT module in an EconoDUAL™3 package, featuring trench/field stop IGBT4 with emitter-controlled HE diodes, PressFIT contact technology, and pre-applied thermal interface material. It operates with a junction temperature up to 150°C, has a continuous collector current of 450 A, and a peak pulse current of 900 A. The module has a copper baseplate, a mass of 345 g, and thermal resistances of 0.104 K/W for the IGBT and 0.149 K/W for the diode. It complies with IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications.
EconoDUAL™ 3 1200 V, 450 A dual IGBT module with TRENCHSTOP™ IGBT4, Emitter Controlled HE Diode, NTC, PressFIT Contact Technology and pre-applied Thermal Interface Material.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FF450R12ME4P_B11 | FF450R12ME4P_B11 |
| Product Name | IGBT Modules | IGBT Modules |
| VCE(on) | 1.75 volts |
