Infineon Technologies AG Power - IGBT - IGBT Modules - FF450R12KE7_E FF450R12KE7_E

Description
62 mm 1200 V, 450 A common emitter IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class VCEsat Tvj op = 175°C overload High creepage and clearance distances Isolated base plate Standard housing RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA certification with UL1557 E83336 Benefits higher current capability for NPC2 in 3-level configuration Highest power density Avoidance of paralleling of IGBT modules Reduced system costs Highest reliability Applications Central inverter solutions Energy Storage Systems EV charging General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS)
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Description
62 mm 1200 V, 450 A common emitter IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class VCEsat Tvj op = 175°C overload High creepage and clearance distances Isolated base plate Standard housing RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA certification with UL1557 E83336 Benefits higher current capability for NPC2 in 3-level configuration Highest power density Avoidance of paralleling of IGBT modules Reduced system costs Highest reliability Applications Central inverter solutions Energy Storage Systems EV charging General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS)
Request a Quote Datasheet

Suppliers

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Supplier Links
Power - IGBT - IGBT Modules - FF450R12KE7_E - FF450R12KE7_E - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - IGBT Modules - FF450R12KE7_E
FF450R12KE7_E
Power - IGBT - IGBT Modules - FF450R12KE7_E FF450R12KE7_E
62 mm 1200 V, 450 A common emitter IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode. Summary of Features Highest power density Best-in-class VCEsat Tvj op = 175°C overload High creepage and clearance distances Isolated base plate Standard housing RoHS compliant 4 kV AC 1 min Insulation Package with CTI > 400 UL/CSA certification with UL1557 E83336 Benefits higher current capability for NPC2 in 3-level configuration Highest power density Avoidance of paralleling of IGBT modules Reduced system costs Highest reliability Applications Central inverter solutions Energy Storage Systems EV charging General purpose motor drive - variating frequency and voltage Uninterruptible power supplies (UPS)

62 mm 1200 V, 450 A common emitter IGBT module with TRENCHSTOP™ IGBT7 and emitter controlled diode.


Summary of Features

  • Highest power density
  • Best-in-class VCEsat
  • Tvj op = 175°C overload
  • High creepage and clearance distances
  • Isolated base plate
  • Standard housing
  • RoHS compliant
  • 4 kV AC 1 min Insulation
  • Package with CTI > 400
  • UL/CSA certification with UL1557 E83336

Benefits

  • higher current capability
  • for NPC2 in 3-level configuration
  • Highest power density
  • Avoidance of paralleling of IGBT modules
  • Reduced system costs
  • Highest reliability

Applications

  • Central inverter solutions
  • Energy Storage Systems
  • EV charging
  • General purpose motor drive - variating frequency and voltage
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF450R12KE7_E
Product Name Power - IGBT - IGBT Modules - FF450R12KE7_E
VCE(on) 1.5 volts
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