Infineon Technologies AG IGBT Modules FF400R12KT3_E

Description
IGBT Modules IGBT 1200V 400A
Description
IGBT Modules IGBT 1200V 400A
Datasheet
Datasheet Summary
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The FF400R12KT3_E is a 62mm C-series IGBT module with a common emitter, designed for inverter applications. It features an IGBT rated for 1200 V collector-emitter voltage and 400 A continuous collector current, with a maximum total power dissipation of 2000 W. The module includes a complementary diode rated for 1200 V reverse voltage and 400 A forward current. The gate-emitter voltage is ±20 V, and the gate charge is 3.70 µC. It has a thermal resistance from junction to case of 0.0312 K/W for the IGBT and 0.0462 K/W for the diode. The module is insulated with Al2O3 and meets IEC 60747-14 standards. Mounting requires M6 screws with torque of 3.00 to 6.00 Nm. The operating case temperature range is -40 °C to 125 °C, and the module weighs 340 g.

Datasheet Summary
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The FF400R12KT3_E is a 62mm C-series IGBT module with a common emitter, designed for inverter applications. It features an IGBT rated for 1200 V collector-emitter voltage and 400 A continuous collector current, with a maximum total power dissipation of 2000 W. The module includes a complementary diode rated for 1200 V reverse voltage and 400 A forward current. The gate-emitter voltage is ±20 V, and the gate charge is 3.70 µC. It has a thermal resistance from junction to case of 0.0312 K/W for the IGBT and 0.0462 K/W for the diode. The module is insulated with Al2O3 and meets IEC 60747-14 standards. Mounting requires M6 screws with torque of 3.00 to 6.00 Nm. The operating case temperature range is -40 °C to 125 °C, and the module weighs 340 g.

Suppliers

Company
Product
Description
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Sheung Wan, Hong Kong
IGBT Modules
FF400R12KT3_E
IGBT Modules FF400R12KT3_E
IGBT Modules IGBT 1200V 400A

IGBT Modules IGBT 1200V 400A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF400R12KT3_E
Product Name IGBT Modules
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