The IGBT Array & Module Transistor, part number 27X9047, is a dual NPN module designed for high-performance applications. It has a maximum continuous collector current of 485 A and a collector-emitter voltage rating of 650 V. The module features a total power dissipation capability of 1.25 kW and a collector-emitter saturation voltage of 1.55 V at a collector current of 400 A. It is suitable for high-power converters, motor drives, and UPS systems. This module is characterized by its high short-circuit capability and self-limiting short-circuit current, making it robust for demanding applications. It operates effectively within a temperature range of -40°C to 150°C and has an insulation strength of 2.5 kV AC for one minute. The product is RoHS compliant, ensuring it meets environmental standards. Engineers considering this module should evaluate its specifications against their project requirements, particularly in terms of current handling, voltage ratings, and thermal performance.
IGBT Module Trench Field Stop 2 Independent 650V 1250W Chassis Mount Module
IGBT MODULE 650V 1250W
IGBT Array & Module Transistor, Dual NPN, 485 A, 1.55 V, 1.25 kW, 650 V, Module RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|
| Product Category | Transistors | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 448-FF400R07KE4HOSA1-ND | FF400R07KE4HOSA1 | 27X9047 |
| Product Name | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs | Igbt Array & Module Transistor, Dual Npn, 485 A, 1.55 V, 1.25 Kw, 650 V, Module Rohs Compliant Infineon |
| Package Type | Module | TO-3 |
