Infineon Technologies AG IGBT Modules FF300R12KT3P_E

Description
IGBT Modules
Description
IGBT Modules
Datasheet
Datasheet Summary
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The FF300R12KT3P_E is a half-bridge IGBT module integrating a Trench/Fieldstop IGBT3 and an emitter-controlled HE diode for inverter applications. It is packaged in a baseplate-mounted module measuring 89 mm by 107 mm. The device has a continuous collector current rating of 300 A at 65°C and a peak collector current of 600 A. The collector-emitter voltage rating is 1200 V, with a gate-emitter voltage limit of ±20 V. Electrical isolation between the module and heatsink is 2.5 kV RMS at 50 Hz for one minute. The operating and storage junction temperature range is -40°C to 125°C. Mounting torque for electrical terminals is 2.5 to 5.0 Nm and for the heatsink, 3.0 to 6.0 Nm. The module weighs 340 g and complies with RoHS, IEC 60114-1, and IEC 60286-3 standards.

Datasheet Summary
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The FF300R12KT3P_E is a half-bridge IGBT module integrating a Trench/Fieldstop IGBT3 and an emitter-controlled HE diode for inverter applications. It is packaged in a baseplate-mounted module measuring 89 mm by 107 mm. The device has a continuous collector current rating of 300 A at 65°C and a peak collector current of 600 A. The collector-emitter voltage rating is 1200 V, with a gate-emitter voltage limit of ±20 V. Electrical isolation between the module and heatsink is 2.5 kV RMS at 50 Hz for one minute. The operating and storage junction temperature range is -40°C to 125°C. Mounting torque for electrical terminals is 2.5 to 5.0 Nm and for the heatsink, 3.0 to 6.0 Nm. The module weighs 340 g and complies with RoHS, IEC 60114-1, and IEC 60286-3 standards.

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Sheung Wan, Hong Kong
IGBT Modules
FF300R12KT3P_E
IGBT Modules FF300R12KT3P_E
IGBT Modules

IGBT Modules

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF300R12KT3P_E
Product Name IGBT Modules
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