Infineon Technologies AG IGBT Modules FF225R65T3E3

Description
XHP™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. Summary of Features Standardized XHP™ 3 housing 6.5 kV 10.4 kV isolation CTI 600 Fire and smoke classification according to EN45545 R22, R23, R24, HL2 AlSiC baseplate and AlN substrate Ultrasonic welded terminals Low stray inductance and symmetric internal current sharing Modular concept Benefits Excellent scalability by paralleling of XHP™ modules Accelerated design-in process due to simplified mechanical design Clean switching Applications Traction
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Description
XHP™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. Summary of Features Standardized XHP™ 3 housing 6.5 kV 10.4 kV isolation CTI 600 Fire and smoke classification according to EN45545 R22, R23, R24, HL2 AlSiC baseplate and AlN substrate Ultrasonic welded terminals Low stray inductance and symmetric internal current sharing Modular concept Benefits Excellent scalability by paralleling of XHP™ modules Accelerated design-in process due to simplified mechanical design Clean switching Applications Traction
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IGBT Modules - FF225R65T3E3 - Infineon Technologies AG
Neubiberg, Germany
IGBT Modules
FF225R65T3E3
IGBT Modules FF225R65T3E3
XHP™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. Summary of Features Standardized XHP™ 3 housing 6.5 kV 10.4 kV isolation CTI 600 Fire and smoke classification according to EN45545 R22, R23, R24, HL2 AlSiC baseplate and AlN substrate Ultrasonic welded terminals Low stray inductance and symmetric internal current sharing Modular concept Benefits Excellent scalability by paralleling of XHP™ modules Accelerated design-in process due to simplified mechanical design Clean switching Applications Traction

XHP™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode.


Summary of Features

  • Standardized XHP™ 3 housing
  • 6.5 kV
  • 10.4 kV isolation
  • CTI 600
  • Fire and smoke classification according to EN45545 R22, R23, R24, HL2
  • AlSiC baseplate and AlN substrate
  • Ultrasonic welded terminals
  • Low stray inductance and symmetric internal current sharing
  • Modular concept

Benefits

  • Excellent scalability by paralleling of XHP™ modules
  • Accelerated design-in process due to simplified mechanical design
  • Clean switching

Applications

  • Traction
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number FF225R65T3E3
Product Name IGBT Modules
VCES 6500 volts
VCE(on) 3 volts
IC(max) 225 amps
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