FF225R65T3E3 is a 6500 V, 225 A dual IGBT module with trench/fieldstop IGBT3 and emitter-controlled diodes, packaged in an XHP™3 housing measuring 70 mm in height and 86 mm in width. It features a 10.4 kV AC isolation rating, a CTI > 600, and an AlSiC baseplate, with a storage temperature range of -55°C to 125°C. The module complies with EN45545-2 R23 (HL3) for fire protection. Internal inductance is 25 nH, with a maximum collector-emitter voltage of 6500 V and peak repetitive collector current of 450 A. It meets IEC 60747, IEC 60749, and IEC 60068 standards for industrial applications.
XHP™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | FF225R65T3E3 |
| Product Name | IGBT Modules |
| VCES | 6500 volts |
| VCE(on) | 3 volts |
| IC(max) | 225 amps |
