Evaluate paralleling of CoolGaN™ 600 V HEMTs in half-bridge configurations for higher power applications.
The EVAL_HB_ParallelGaN is an test platform for design engineers who want to investigate parallel operation of Infineon CoolGaN™ to reach higher power levels in their designs. It is possible to check dynamic and static current sharing of individual devices in parallel configuration up to MHz level.
The board also makes a good reference for PCB layout practices to achieve trouble-free operation with extremely fast GaN devices. The board is designed with isolated control and high/low-side driver power supply and drivers provide negative voltage to the gates during off-time to minimize the risk of shoot-through currents due to high dV/dt. A heatsink with insulating thermal pad may be attached to the devices if continuous operation at high power is desired. Gate common-mode inductors included to prevent coupling through the source terminals of the devices that might lead to oscillations.
This system solution is available as Hardware Board or Reference Design.
Summary of Features
Evaluate GaN paralleling benefits and issues in half-bridge environment
Configurable for buck, boost or pulsed operation for hard- or soft-switching
Static and dynamic current sharing can be monitored through separate shunt resistors
Adjustable dead time
Benefits
Doubling the current carrying capacity by effectively halving the RDS(on)
Single driver can drive two parallel GaN devices
Potential Applications
Power supplies (SMPS)
List of components
CoolGaN™ 600V e-mode HEMT (IGOT60R070D1)
1200V single high-side gate-driver IC (1EDI20N12AF)
Please be aware of the errata sheet.
Introduction guide
Get familiar with a board – recommended test procedure
Safety letter
Testing report
Reference Design
Download the reference design data here.
Evaluate paralleling of CoolGaN™ 600 V HEMTs in half-bridge configurations for higher power applications.
The EVAL_HB_ParallelGaN is an test platform for design engineers who want to investigate parallel operation of Infineon CoolGaN™ to reach higher power levels in their designs. It is possible to check dynamic and static current sharing of individual devices in parallel configuration up to MHz level.
The board also makes a good reference for PCB layout practices to achieve trouble-free operation with extremely fast GaN devices. The board is designed with isolated control and high/low-side driver power supply and drivers provide negative voltage to the gates during off-time to minimize the risk of shoot-through currents due to high dV/dt. A heatsink with insulating thermal pad may be attached to the devices if continuous operation at high power is desired. Gate common-mode inductors included to prevent coupling through the source terminals of the devices that might lead to oscillations.
This system solution is available as Hardware Board or Reference Design.
Summary of Features
- Evaluate GaN paralleling benefits and issues in half-bridge environment
- Configurable for buck, boost or pulsed operation for hard- or soft-switching
- Static and dynamic current sharing can be monitored through separate shunt resistors
- Adjustable dead time
Benefits
- Doubling the current carrying capacity by effectively halving the RDS(on)
- Single driver can drive two parallel GaN devices
Potential Applications
Power supplies (SMPS)
List of components
- CoolGaN™ 600V e-mode HEMT
(IGOT60R070D1)
- 1200V single high-side gate-driver IC
(1EDI20N12AF)
Please be aware of the errata sheet.
Introduction guide
Get familiar with a board – recommended test procedure
- Safety letter
- Testing report
Reference Design
Download the reference design data here.
