Infineon Technologies AG Evaluation Boards EVAL_2EDB_HB_GAN

CoolGaN™ GIT HEMT half-bridge evaluation board with EiceDRIVER™ 2EDB8259Y EVAL_2EDB_HB_GaN enables the testing of Infineon CoolGaN™ GIT HEMT in combination with EiceDRIVER™ 2EDB8259Y. The board allows to configure the auxiliary supply, that can be bipolar or unipolar, isolated or non-isolated, with bootstrap or without. Using an external inductor, the board can be configured for buck or boost-mode, double-pulse testing or continuous PWM operation, hard or soft-switching at power levels to several kW and frequencies up to MHz range. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. For board samples please contact our support. Summary of Features Simple GaN half-bridge with dedicated GaN driver ICs Configurable auxiliary supply: unipolar vs. bipolar (with regulation on positive or negative rail), isolated vs non-isolated (bootstrap) Shunt on low-side GaN for current measurement Benefits Easy setup and use Enable testing with different configurations (Buck, Boost, Direct and Reverse Double Pulse) Evaluate high-frequency capabilities of GaN Evaluate waveforms with low ringing, overshoot, EMI Enables easy evaluation at multi-kilowatt power levels Shoot-through check and Eoss measurements via current shunt Potential Applications Telecom power supply Server power supply Micro inverter solutions List of components EiceDRIVER™ 1EDN7511B EiceDRIVER™ 2EDB8259Y CoolGaN™ IGLD60R070D1 Complimentary boards KIT_1EDB_AUX_GAN Interactive 3D board model