Infineon Technologies AG Evaluation Boards EVAL-1ED3142MU12F-SIC

Description
The EVAL-1ED3142MU12F-SI C is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing. 1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar. Summary of Features EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family) For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver 6.5 A typical sinking and sourcing peak output current 35 V absolute maximum output supply voltage 45 ns propagation delay with 20 ns input filter High common-mode transient immunity CMTI >300 kV/μs Separate source and sink outputs Short-circuit clamping and active shutdown DSO-8 150 mil narrow-body package Benefits Integrated filters reduce the need of external filters Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature Suitable for operation at high ambient temperature and in fast switching applications UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion The precise threshold and timings, combined with UL 1577 certification enable superior application safety Applications EV charging Motor Control Photovoltaic Uninterruptible power supplies (UPS)
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Description
The EVAL-1ED3142MU12F-SI C is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing. 1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar. Summary of Features EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family) For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver 6.5 A typical sinking and sourcing peak output current 35 V absolute maximum output supply voltage 45 ns propagation delay with 20 ns input filter High common-mode transient immunity CMTI >300 kV/μs Separate source and sink outputs Short-circuit clamping and active shutdown DSO-8 150 mil narrow-body package Benefits Integrated filters reduce the need of external filters Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature Suitable for operation at high ambient temperature and in fast switching applications UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion The precise threshold and timings, combined with UL 1577 certification enable superior application safety Applications EV charging Motor Control Photovoltaic Uninterruptible power supplies (UPS)
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Suppliers

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Evaluation Boards - EVAL-1ED3142MU12F-SIC - Infineon Technologies AG
Neubiberg, Germany
Evaluation Boards
EVAL-1ED3142MU12F-SIC
Evaluation Boards EVAL-1ED3142MU12F-SIC
The EVAL-1ED3142MU12F-SI C is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs. This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing. 1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar. Summary of Features EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family) For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver 6.5 A typical sinking and sourcing peak output current 35 V absolute maximum output supply voltage 45 ns propagation delay with 20 ns input filter High common-mode transient immunity CMTI >300 kV/μs Separate source and sink outputs Short-circuit clamping and active shutdown DSO-8 150 mil narrow-body package Benefits Integrated filters reduce the need of external filters Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature Suitable for operation at high ambient temperature and in fast switching applications UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion The precise threshold and timings, combined with UL 1577 certification enable superior application safety Applications EV charging Motor Control Photovoltaic Uninterruptible power supplies (UPS)

The EVAL-1ED3142MU12F-SIC is in half-bridge configuration with two gate driver ICs (1ED3142MU12F) to drive power switches such as IGBTs, MOSFETs and SiC MOSFETs.

This board comes pre-populated with two CoolSiC™ MOSFET IMZA120R020M1H, an additional gate driver IC is used for isolated over-current feedback signal from high voltage side to logic control side, fast operational amplifier is used as comparator for over-current detection. It is best suited for double-pulse testing.

1ED3142MU12F belongs to the EiceDRIVER™ Compact 1ED31xx family (X3 compact family). 1ED3142MU12F offers separate sink and source output, accurate and stable timing, active shutdown to ensure a safe power transistor off-state in case the output chip is not connected to the power, short-circuit clamping to limit the gate voltage during short circuit. The driver can operate over a wide supply voltage range, either unipolar or bipolar.


Summary of Features

  • EiceDRIVER™ Compact single channel isolated gate driver 1ED31xx family (X3 compact family)
  • For use with 650 V/1200 V/1700 V/2300 V/ IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • 6.5 A typical sinking and sourcing peak output current
  • 35 V absolute maximum output supply voltage
  • 45 ns propagation delay with 20 ns input filter
  • High common-mode transient immunity CMTI >300 kV/μs
  • Separate source and sink outputs
  • Short-circuit clamping and active shutdown
  • DSO-8 150 mil narrow-body package

Benefits

  • Integrated filters reduce the need of external filters
  • Tight IC-to-IC propagation delay matching (7 ns max.), tolerance improves application robustness without variations due to aging, current, and temperature
  • Suitable for operation at high ambient temperature and in fast switching applications
  • UL 1577 VISO = 3.6 kV (rms) for 1 s, 3.0 kV (rms) for 1 min
  • Tight propagation delay allows minimum deadtime improving system efficiency and decreasing harmonic distortion
  • The precise threshold and timings, combined with UL 1577 certification enable superior application safety

Applications

  • EV charging
  • Motor Control
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Electronic Development Boards
Product Number EVAL-1ED3142MU12F-SIC
Product Name Evaluation Boards
Category Developement Board
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