Infineon Technologies AG Semiconductor Power Modules ESD24VS2UE6327

Description
5A@8/20us 41V 26V 24V SOT-23 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - ESD24VS2UE6327 - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
5A@8/20us 41V 26V 24V SOT-23 ESD and Surge Protection (TVS/ESD) ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - ESD24VS2UE6327 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
ESD24VS2UE6327
Semiconductor Power Modules ESD24VS2UE6327
5A@8/20us 41V 26V 24V SOT-23 ESD and Surge Protection (TVS/ESD) ROHS

5A@8/20us 41V 26V 24V SOT-23 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number ESD24VS2UE6327
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules IPM - 6th-Gen V Series Model 6MBP35VBA120-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules IPM
6th-Gen V Series Model 6MBP35VBA120-50
Specs
Technology IGBT; Intelligent Power Module (IPM)
Package P626
Output Voltage 1200 volts
View Details
- IGCM04F60HAXKMA1 - Rochester Electronics
Infineon Technologies AG
IGCM04F60HAXKMA1
Specs
Technology Intelligent Power Module (IPM)
View Details
flow DUAL E2 SiC Power Module - 10-EY122PA006MR-LU39F48T - Vincotech GmbH
Vincotech GmbH
flow DUAL E2 SiC Power Module
10-EY122PA006MR-LU39F48T
Specs
Technology SiC; SiC MOSFET
Configuration Half-Bridge
Output Voltage 1200 volts
View Details
IGBT Modules - - Kyocera Corporation
Kyocera Corporation
IGBT Modules
Specs
Technology IGBT
View Details