SiC Power MOSFET
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Phase leg
VDSS (V): 1200
RDSon (mR) typ: 2.7
Current (A) Tc=80C: 584
Silicon type: SiC Mosfet
Package: SP6C
Microchip Technology, Inc.
Done
Datasheet
Description
SiC Power MOSFET
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Phase leg
VDSS (V): 1200
RDSon (mR) typ: 2.7
Current (A) Tc=80C: 584
Silicon type: SiC Mosfet
Package: SP6C
SiC Power MOSFET
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
Stable temperature behavior
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Additional Features
Configuration: Phase leg
VDSS (V): 1200
RDSon (mR) typ: 2.7
Current (A) Tc=80C: 584
Silicon type: SiC Mosfet
Package: SP6C
SiC Power MOSFET
Low RDS(on)
High temperature performance
Kelvin source for easy drive
Low stray inductance
Internal thermistor for temperature monitoring (optional)
High efficiency converter
Outstanding performance at high frequency operation
