Infineon Technologies AG Single FETs, MOSFETs BSS87 E6433

The BSS87 is an N-channel enhancement mode MOSFET designed for small-signal switching applications. It is packaged in a P-SOT89-4-2 surface mount case. The device has a continuous drain current of 0.26 A at 25 °C and a maximum drain-source breakdown voltage of 240 V. It features a drain-source on-state resistance of 4.6 Ω to 7.5 Ω depending on gate voltage, a gate-source voltage rating of ±20 V, and a power dissipation of 1 W. The MOSFET is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified to AEC-Q101. Operating and storage junction temperatures range from -55 °C to +150 °C. Thermal resistance from junction to case is 10 K/W, and to ambient is 125 K/W for minimum footprint mounting.