The BSS126 is an N-channel depletion mode MOSFET designed for low-power switching applications. It is packaged in a PG-SOT-23 surface-mount case and is RoHS compliant and halogen-free per IEC61249-2-21. The device has a drain-source breakdown voltage of 600 V, a maximum continuous drain current of 21 mA at 25 °C, and a drain-source on-state resistance ranging from 280 Ω to 700 Ω depending on gate voltage. It is qualified to AEC-Q101 and operates over a temperature range of -55 °C to 150 °C. The gate threshold voltage is specified in bands from -1.6 V to -2.4 V, with the exact band printed on the reel label. The part includes a reverse diode with a continuous forward current rating of 16 mA and a gate-to-source voltage rating of ±20 V.
Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:500mW; No. of Pins:3Pins RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 29AC2874 |
| Product Name | Channel Type Infineon |
| Package Type | TO-3 |
