N-channel MOSFET with a 100 V drain-source breakdown voltage, 170 mA continuous drain current at 25 °C, and a 6 Ω drain-source on-state resistance at 10 V gate-source voltage. Packaged in PG-SOT23, it features a logic-level gate threshold voltage of 1.3 V to 2.3 V and supports a maximum junction temperature of 150 °C. It is rated for a dv/dt of 6 kV/µs and complies with IEC 68-1 climatic category 55/150/56.
N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount PG-SOT23
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | BSS119E7796-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |
