BSP373N is an N-channel enhancement mode MOSFET rated for 100 V drain-source voltage and 1.8 A continuous drain current, designed for automotive and industrial applications. It is housed in a SOT223 package and is avalanche rated with single-pulse energy of 33 mJ. The device has a maximum on-state resistance of 240 mΩ at 10 V gate-source voltage and 1.8 A drain current, and supports a gate-source voltage of ±20 V. It operates over a junction temperature range of -55 °C to 150 °C and meets AEC-Q101 qualification standards. The part is RoHS compliant and halogen-free according to IEC 61249-2-21.
N-Channel Small Signal MOSFET 100 V in SOT-223 package
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1154860-BSP373N
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
OptiMOS™ Small-Signal-Transis
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|
| Product Category | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSP373N | 1154860-BSP373N | 285-BSP373N |
| Product Name | Small Signal/Small Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP373N | MOSFET Transistor |
| Polarity | N-Channel; N | ||
| Transistor Technology / Material | Si/SiC | ||
| Operating Mode | Enhancement | ||
| rDS(on) | 0.2400 ohms |