Infineon Technologies AG Single FETs, MOSFETs BSP317PL6327HTSA1

Description
P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Request a Quote Datasheet
Description
P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
Request a Quote Datasheet

Suppliers

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Supplier Links
Single FETs, MOSFETs - BSP317PL6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSP317PL6327HTSA1TR-ND
Single FETs, MOSFETs BSP317PL6327HTSA1TR-ND
P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21

P-Channel 250V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP317PL6327HTSA1 - 1024445-BSP317PL6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP317PL6327HTSA1
1024445-BSP317PL6327HTSA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP317PL6327HTSA1 1024445-BSP317PL6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1024445-BSP317PL6327 HTSA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 430mA (Ta) Gate-Source Threshold Voltage: 2V @ 370μA Max Gate Charge: 15.1nC @ 10V Max Input Capacitance: 262pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4 Ohm @ 430mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1024445-BSP317PL6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 430mA (Ta)
Gate-Source Threshold Voltage: 2V @ 370μA
Max Gate Charge: 15.1nC @ 10V
Max Input Capacitance: 262pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 430mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSP317PL6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSP317PL6327HTSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSP317PL6327HTSA1
MOSFET P-CH 250V 430MA SOT223-4

MOSFET P-CH 250V 430MA SOT223-4

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSP317PL6327HTSA1TR-ND 1024445-BSP317PL6327HTSA1 BSP317PL6327HTSA1
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP317PL6327HTSA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type TO-261-4, TO-261AA SOT3; PG-SOT223-4 TO-261-4, TO-261AA
Transistor Grade / Operating Range Automotive
V(BR)DSS 250 volts
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