P-channel enhancement mode MOSFET with -100 V drain-source breakdown voltage, -0.68 A continuous drain current, and R_DS(on) of 1.8 Ω at -10 V gate drive, housed in a PG-SOT223-4-1 package. It is qualified to AEC-Q101 and halogen-free per IEC 61249-2-21, with operating and storage temperatures from -55 °C to +150 °C. The device supports a reverse diode dv/dt rating of 6 kV/µs and has a power dissipation of 1.8 W at 25 °C.
P-channel enhancement mode Field-Effect Transistor (FET), -100 V, SOT-223
Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
Manufacturer: Infineon Technologies
Win Source Part Number: 1154848-BSP316P
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | RF Transistors |
| Product Number | BSP316P | 1154848-BSP316P |
| Product Name | Small Signal/Small Power MOSFET | END - OF - LIFE - BSP316P |
| Polarity | P-Channel; P | |
| Transistor Technology / Material | Si/SiC | |
| Operating Mode | Enhancement | |
| rDS(on) | 1.8 ohms |