Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP296 BSP296

Description
Manufacturer: Infineon Technologies Win Source Part Number: 093907-BSP296 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.2A (Ta) Gate-Source Threshold Voltage: 1.8V @ 100μA Max Gate Charge: 6.7nC @ 10V Max Input Capacitance: 152.7pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP296 - 093907-BSP296 - Win Source Electronics
    Win Source Electronics
  • Transistor - 24729197 - Radwell International
    Radwell International
  • N Channel Mosfet, 100V, 1A, Sot-223; Channel Type Infineon - 25M7802 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN - 9152-BSP296 - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 093907-BSP296 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.2A (Ta) Gate-Source Threshold Voltage: 1.8V @ 100μA Max Gate Charge: 6.7nC @ 10V Max Input Capacitance: 152.7pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP296 - 093907-BSP296 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP296
093907-BSP296
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP296 093907-BSP296
Manufacturer: Infineon Technologies Win Source Part Number: 093907-BSP296 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.2A (Ta) Gate-Source Threshold Voltage: 1.8V @ 100μA Max Gate Charge: 6.7nC @ 10V Max Input Capacitance: 152.7pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 1.2A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 093907-BSP296
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.2A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 100μA
Max Gate Charge: 6.7nC @ 10V
Max Input Capacitance: 152.7pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 1.2A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
100V 1.2A MOSFET Transistor
285-BSP296
100V 1.2A MOSFET Transistor 285-BSP296
MOSFET N-CH 100V 1.2A SOT-223 Product overview: BSP296 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSP296 can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.2A SOT-223 Product overview: BSP296 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSP296 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor - 24729197 - Radwell International
Radwell International
Willingboro, NJ, United States
Transistor
24729197
Transistor 24729197
DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 1.1A I(D), 100V, 0.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT223-4. FREE 2 YEAR RADWELL WARRANTY

DISCONTINUED BY MANUFACTURER, POWER FIELD-EFFECT TRANSISTOR, 1.1A I(D), 100V, 0.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT223-4. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
N Channel Mosfet, 100V, 1A, Sot-223; Channel Type Infineon - 25M7802 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 100V, 1A, Sot-223; Channel Type Infineon
25M7802
N Channel Mosfet, 100V, 1A, Sot-223; Channel Type Infineon 25M7802
N CHANNEL MOSFET, 100V, 1A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

N CHANNEL MOSFET, 100V, 1A, SOT-223; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.4V RoHS Compliant: Yes

Supplier's Site
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN - 9152-BSP296 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN
9152-BSP296
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN 9152-BSP296
Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN

Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Radwell International Newark, An Avnet Company Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 093907-BSP296 285-BSP296 24729197 25M7802 9152-BSP296
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP296 100V 1.2A MOSFET Transistor Transistor N Channel Mosfet, 100V, 1A, Sot-223; Channel Type Infineon Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 100 volts
PD 1800 milliwatts 1800 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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