The BSP135 is an N-channel depletion mode MOSFET designed for applications requiring start-up power, in-rush current limiting, or simple current regulation. It is packaged in a PG-SOT223 package and meets AEC-Q101 qualification for automotive use. The device has a maximum drain-source voltage of 600 V, continuous drain current of 0.12 A at 25 °C, and a power dissipation of 1.8 W. It features a gate-source threshold voltage range of -1.4 V to -2.1 V, a drain-source on-state resistance of up to 60 Ω, and a dv/dt rating of 6 kV/µs. The part is RoHS compliant, halogen-free per IEC 61249-2-21, and available in threshold voltage bands marked on reels. ESD classification is 1A per JESD22-A114-HBM.
Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs.
Areas of application include power supply startup power, over-voltage protection, in-rush-current limiter, off-line voltage reference. With one single component it is possible to realize a simple current regulator. All products are suitable for automotive applications. In order to meet special requirements, depletion MOSFETs are available with V GS(th) indicator on the reel.
Summary of Features
Potential Applications
Applications
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MOSFET N-Channel 600V 0.12A SOT223
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| Infineon Technologies AG | RS Components, Ltd. | RS Components, Ltd. | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSP135 | 3545708 | 3545708P |
| Product Name | N-Channel Depletion Mode MOSFET | MOSFETs | MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel |
| Transistor Technology / Material | Si/SiC | ||
| MOSFET Operating Mode | Depletion | Depletion | |
| VGS(off) | -2.1 to -1 volts | ||
| rDS(on) | 45 ohms |
