N-channel enhancement mode MOSFET for switching applications, packaged in PG-SOT223 with a continuous drain current of 0.12 A at 25°C and 0.1 A at 70°C, a drain-source breakdown voltage of 600 V, and on-state resistance of 25 Ω to 45 Ω at 10 V gate voltage. It features a dv/dt rating of 6 kV/µs, gate-source voltage of ±20 V, power dissipation of 1.8 W, and operates from -55°C to +150°C. The device is RoHS compliant, halogen-free according to IEC61249-2-21, and qualified to AEC-Q101.
MOSFET N-Ch 600V 120mA SOT-223-3
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSP125 H6433 |
| Product Name | MOSFET |
