Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO615C G BSO615C G

Manufacturer: Infineon Technologies
Win Source Part Number: 127719-BSO615C G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 3.1A, 2A
Gate-Source Threshold Voltage: 2V @ 20μA
Max Gate Charge: 22.5nC @ 10V
Max Input Capacitance: 380pF @ 25V
Maximum Rds On at Id,Vgs: 110 mOhm @ 3.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

MOSFET N/P-CH 60V 3.1A/2A 8SOIC Product overview: BSO615C G from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3.1A, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 3.1A, 2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSO615C G can be used for catalog matching and distributor lookup.