The BSO613SPV G is a P-Channel MOSFET designed for automotive applications, compliant with AEC-Q101 standards. It features an enhancement mode operation and is avalanche rated, making it suitable for high-reliability environments. The device has a maximum drain-source voltage of -60 V and a continuous drain current rating of -3.44 A at 25 ¬8C. Its on-state resistance is specified at a maximum of 130 mOc when conducting 3.44 A at a gate-source voltage of 10 V. The MOSFET operates within a temperature range of -55 ¬8C to +150 ¬8C and has a maximum power dissipation of 2.5 W. It also supports a gate-source voltage of ¬±20 V and has a low gate charge of 30 nC at 10 V. The product is packaged in an 8-SOIC format and is halogen-free according to IEC61249-2-21 standards. This component is suitable for applications requiring efficient switching and thermal performance.
P-Channel 60V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8-6
P-Channel 60V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8-6
P-Channel 60V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8-6
MOSFET P-CH 8-SOIC Product overview: BSO613SPVGXUMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOIC. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SOIC, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSO613SPVGXUMA1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1224370-BSO613SPVGXU
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, SIPMOS®
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8-6
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSO613SPV G; BSO613SPVG; BSO613SPVGHUMA1; BSO613SPVGXT; SP000216309;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP005353854,448-BSO6
Base Product Number: BSO613
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET P-CH 8-SOIC
TRANSISTOR, SIPMOS SERIES, MOSFET, P-CHANNEL, 60 VDSS, 3.44 A, 130 MOHM, 2.5 W, SURFACE MOUNT. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 448-BSO613SPVGXUMA1TR-ND | 278-BSO613SPVGXUMA1 | 2580704P | 1224370-BSO613SPVGXUMA1 | BSO613SPVGXUMA1 | 220404651 |
| Product Name | Single FETs, MOSFETs | SOIC MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | P-Channel | P-Channel | P-Channel | |||
| Package Type | "8-SOIC (0.154"", 3.90mm Width)" | Tape & Reel (TR) | SO-8; SO-8 | SO-8; SOT3 | 8-SOIC (0.154, 3.90mm Width) | |
| Transistor Grade / Operating Range | Automotive | |||||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts |
