Manufacturer: Infineon Technologies
Win Source Part Number: 129646-BSO303P H
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Maximum Power Dissipation: 2W
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 7A
Gate-Source Threshold Voltage: 2V @ 100μA
Max Gate Charge: 49nC @ 10V
Max Input Capacitance: 2678pF @ 25V
Maximum Rds On at Id,Vgs: 21 mOhm @ 8.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET P-Ch -30V -8.2A DSO-8 OptiMOS P
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 129646-BSO303P H | BSO303P H |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO303P H | MOSFET |
| Polarity | P-Channel | |
| V(BR)DSS | 30 volts | |
| PD | 2000 milliwatts |
