Infineon Technologies AG P-Channel Power MOSFET BSO301SP H

Description
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of Features Enhancement mode Normal level, logic level or super logic level Avalanche rated Pb-free lead plating RoHS compliant Potential Applications Consumer DC-DC eMobility Motor control Notebook Onboard charger Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with IPL60R085P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET 2EDL05N06PF | Gate driver ICs BSD235N | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL05I06PF | Gate driver ICs ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs BSC016N06NS | N-Channel Power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 2EDB7259K | Gate driver ICs IPP60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R085P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET 2EDL05N06PF | Gate driver ICs BSD235N | Small signal/small power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of Features Enhancement mode Normal level, logic level or super logic level Avalanche rated Pb-free lead plating RoHS compliant Potential Applications Consumer DC-DC eMobility Motor control Notebook Onboard charger Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with IPL60R085P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET 2EDL05N06PF | Gate driver ICs BSD235N | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL05I06PF | Gate driver ICs ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs BSC016N06NS | N-Channel Power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 2EDB7259K | Gate driver ICs IPP60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R085P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET 2EDL05N06PF | Gate driver ICs BSD235N | Small signal/small power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
P-Channel Power MOSFET - BSO301SP H - Infineon Technologies AG
Neubiberg, Germany
P-Channel Power MOSFET
BSO301SP H
P-Channel Power MOSFET BSO301SP H
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of Features Enhancement mode Normal level, logic level or super logic level Avalanche rated Pb-free lead plating RoHS compliant Potential Applications Consumer DC-DC eMobility Motor control Notebook Onboard charger Applications 48 V intermediate bus converter (IBC) Designers who used this product also designed with IPL60R085P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET 2EDL05N06PF | Gate driver ICs BSD235N | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPT60R035CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL05I06PF | Gate driver ICs ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs BSC016N06NS | N-Channel Power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 2EDB7259K | Gate driver ICs IPP60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R085P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate driver ICs IDL12G65C5 | CoolSiC™ Schottky Diodes IPL60R075CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET 2EDL05N06PF | Gate driver ICs BSD235N | Small signal/small power MOSFET 1 2 3 4 5

Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs.

These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.


Summary of Features

  • Enhancement mode
  • Normal level, logic level or super logic level
  • Avalanche rated
  • Pb-free lead plating
  • RoHS compliant

Potential Applications

  • Consumer
  • DC-DC
  • eMobility
  • Motor control
  • Notebook
  • Onboard charger

Applications

  • 48 V intermediate bus converter (IBC)

Designers who used this product also designed with


  • IPL60R085P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDB8275F |
    Gate driver ICs
  • IDL12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPL60R075CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE3AR0680JZ |
    CoolSET™ Fixed Frequency
  • 2N7002DW |
    Small signal/small power MOSFET
  • 2EDL05N06PF |
    Gate driver ICs
  • BSD235N |
    Small signal/small power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPT60R035CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDL05I06PF |
    Gate driver ICs
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • IPZA60R016CM8 |
    600 V CoolMOS™ 8
  • 2EDB7259K |
    Gate driver ICs
  • IPP60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB65R045C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R085P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDB8275F |
    Gate driver ICs
  • IDL12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPL60R075CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE3AR0680JZ |
    CoolSET™ Fixed Frequency
  • 2N7002DW |
    Small signal/small power MOSFET
  • 2EDL05N06PF |
    Gate driver ICs
  • BSD235N |
    Small signal/small power MOSFET

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO301SP H - 128238-BSO301SP H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO301SP H
128238-BSO301SP H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO301SP H 128238-BSO301SP H
Manufacturer: Infineon Technologies Win Source Part Number: 128238-BSO301SP H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.79W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-DSO-8 Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 12.6A (Ta) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 136nC @ 10V Max Input Capacitance: 5890pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 14.9A, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 128238-BSO301SP H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.79W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 12.6A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 136nC @ 10V
Max Input Capacitance: 5890pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 14.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
-30V -14.9A MOSFET Transistor
2088-BSO301SP H
-30V -14.9A MOSFET Transistor 2088-BSO301SP H
MOSFETs P-Ch -30V -14.9A DSO-8 OptiMOS P Product overview: BSO301SP H from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, -14.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -14.9A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSO301SP H can be used for catalog matching and distributor lookup.

MOSFETs P-Ch -30V -14.9A DSO-8 OptiMOS P Product overview: BSO301SP H from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, -14.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -14.9A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSO301SP H can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P

MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSO301SP H 128238-BSO301SP H 2088-BSO301SP H BSO301SP H
Product Name P-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO301SP H -30V -14.9A MOSFET Transistor MOSFET
Polarity P-Channel; P P-Channel; P-Channel P-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0080 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SO-8; PG-DSO-8 SO-8; SOT3; PG-DSO-8 Reel
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