Infineon Technologies AG MOSFET BSO207P H

Description
MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P
Description
MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P
Datasheet
Datasheet Summary
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The BSO207P H is a dual P-channel MOSFET in a PG-DSO-8 package, designed for low-voltage switching applications. It has a drain-source voltage rating of -20 V and a continuous drain current of -5.7 A at 25 °C with V_GS = 4.5 V. The on-state resistance is 45 mΩ maximum at V_GS = 4.5 V and 70 mΩ maximum at V_GS = 2.5 V. The device operates up to 150 °C junction temperature and is RoHS compliant and halogen-free. It meets JEDEC qualifications and has an ESD rating of HBM class 1A. The thermal resistance from junction to solder point is 35 K/W.

Datasheet Summary
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The BSO207P H is a dual P-channel MOSFET in a PG-DSO-8 package, designed for low-voltage switching applications. It has a drain-source voltage rating of -20 V and a continuous drain current of -5.7 A at 25 °C with V_GS = 4.5 V. The on-state resistance is 45 mΩ maximum at V_GS = 4.5 V and 70 mΩ maximum at V_GS = 2.5 V. The device operates up to 150 °C junction temperature and is RoHS compliant and halogen-free. It meets JEDEC qualifications and has an ESD rating of HBM class 1A. The thermal resistance from junction to solder point is 35 K/W.

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Sheung Wan, Hong Kong
MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P

MOSFET P-Ch -20V -5.7A DSO-8 OptiMOS P

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSO207P H
Product Name MOSFET
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