Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSO033N03MSG BSO033N03MSG

Manufacturer: Infineon Technologies
Win Source Part Number: 237256-BSO033N03MSG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.56W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-DSO-8
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 17A (Ta)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 124nC @ 10V
Max Input Capacitance: 9600pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 22A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited

MOSFET N-CH 30V 17A 8DSO Product overview: BSO033N03MSG from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 17A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSO033N03MSG can be used for catalog matching and distributor lookup.