OptiMOS™ 5 25 V Power Block in 5x6 mm²
OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.
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Product overview: BSG0812ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSG0812ND can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSG0812ND | 278-BSG0812ND |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSG0812ND | MOSFET Transistor |
| Polarity | N-Channel; N+N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0035 to 9.00E-4 ohms |