Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSG0812ND BSG0812ND

Description
OptiMOS™ 5 25 V Power Block in 5x6 mm² OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50 A max average load current Source-Down for better PCB cooling Internally connected low & high side Lowest loop inductance High side Kelvin connection Benefits Compact & simple layout for a DC-DC Optimized layout Best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Designers who used this product also designed with TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers IPB039N10N3 G | N-Channel Power MOSFET BAS40-06W | Schottky Diodes BSC047N08NS3 G | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers IPB039N10N3 G | N-Channel Power MOSFET BAS40-06W | Schottky Diodes BSC047N08NS3 G | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 1 2
Request a Quote Datasheet
Description
OptiMOS™ 5 25 V Power Block in 5x6 mm² OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50 A max average load current Source-Down for better PCB cooling Internally connected low & high side Lowest loop inductance High side Kelvin connection Benefits Compact & simple layout for a DC-DC Optimized layout Best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Designers who used this product also designed with TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers IPB039N10N3 G | N-Channel Power MOSFET BAS40-06W | Schottky Diodes BSC047N08NS3 G | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers IPB039N10N3 G | N-Channel Power MOSFET BAS40-06W | Schottky Diodes BSC047N08NS3 G | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSG0812ND - BSG0812ND - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSG0812ND
BSG0812ND
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSG0812ND BSG0812ND
OptiMOS™ 5 25 V Power Block in 5x6 mm² OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50 A max average load current Source-Down for better PCB cooling Internally connected low & high side Lowest loop inductance High side Kelvin connection Benefits Compact & simple layout for a DC-DC Optimized layout Best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Designers who used this product also designed with TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers IPB039N10N3 G | N-Channel Power MOSFET BAS40-06W | Schottky Diodes BSC047N08NS3 G | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET XDPE12284C-0000 | Digital Multiphase Controllers IPB039N10N3 G | N-Channel Power MOSFET BAS40-06W | Schottky Diodes BSC047N08NS3 G | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages 1 2

OptiMOS™ 5 25 V Power Block in 5x6 mm²

OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.


Summary of Features

  • 50 A max average load current
  • Source-Down for better PCB cooling
  • Internally connected low & high side
  • Lowest loop inductance
  • High side Kelvin connection

Benefits

  • Compact & simple layout for a DC-DC
  • Optimized layout
  • Best thermal performance

Potential Applications

  • Desktop and server
  • Single-phase & multiphase POL
  • CPU/GPU regulation in notebooks & DDR memory
  • High power density voltage regulator

Designers who used this product also designed with


  • TDA21462 |
    Integrated Smart Power Stages
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • XDPE12284C-0000 |
    Digital Multiphase Controllers
  • IPB039N10N3 G |
    N-Channel Power MOSFET
  • BAS40-06W |
    Schottky Diodes
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • XDPE12284C-0000 |
    Digital Multiphase Controllers
  • IPB039N10N3 G |
    N-Channel Power MOSFET
  • BAS40-06W |
    Schottky Diodes
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages

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Supplier's Site Datasheet
MOSFET Transistor 278-BSG0812ND
Product overview: BSG0812ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSG0812ND can be used for catalog matching and distributor lookup.

Product overview: BSG0812ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSG0812ND can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSG0812ND 278-BSG0812ND
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSG0812ND MOSFET Transistor
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 0.0035 to 9.00E-4 ohms
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