Infineon Technologies AG N-Channel Power MOSFET BSG0811ND

Description
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50A max average load current Source-down low side MOSFET for better PCB cooling Internally connected low-side and high side (lowest loop inductance) High side Kelvin connection for more efficient driving Benefits Compact and simplified layout for a DC-DC converter Optimized layout with lowest loop inductivity and best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications Space applications Designers who used this product also designed with ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM)
Request a Quote Datasheet
Description
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50A max average load current Source-down low side MOSFET for better PCB cooling Internally connected low-side and high side (lowest loop inductance) High side Kelvin connection for more efficient driving Benefits Compact and simplified layout for a DC-DC converter Optimized layout with lowest loop inductivity and best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications Space applications Designers who used this product also designed with ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSG0811ND - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSG0811ND
N-Channel Power MOSFET BSG0811ND
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50A max average load current Source-down low side MOSFET for better PCB cooling Internally connected low-side and high side (lowest loop inductance) High side Kelvin connection for more efficient driving Benefits Compact and simplified layout for a DC-DC converter Optimized layout with lowest loop inductivity and best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications Space applications Designers who used this product also designed with ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) ISZ230N10NM6 | N-Channel Power MOSFET BSC117N08NS5 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM)

OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.


Summary of Features

  • 50A max average load current
  • Source-down low side MOSFET for better PCB cooling
  • Internally connected low-side and high side (lowest loop inductance)
  • High side Kelvin connection for more efficient driving

Benefits

  • Compact and simplified layout for a DC-DC converter
  • Optimized layout with lowest loop inductivity and best thermal performance

Potential Applications

  • Desktop and server
  • Single-phase & multiphase POL
  • CPU/GPU regulation in notebooks & DDR memory
  • High power density voltage regulator

Applications

  • Space applications

Designers who used this product also designed with


  • ISZ230N10NM6 |
    N-Channel Power MOSFET
  • BSC117N08NS5 |
    N-Channel Power MOSFET
  • IPB110N20N3LF |
    N-Channel Power MOSFET
  • CY15B102Q-SXET |
    F-RAM (Ferroelectric RAM)
  • ISZ230N10NM6 |
    N-Channel Power MOSFET
  • BSC117N08NS5 |
    N-Channel Power MOSFET
  • IPB110N20N3LF |
    N-Channel Power MOSFET
  • CY15B102Q-SXET |
    F-RAM (Ferroelectric RAM)
  • ISZ230N10NM6 |
    N-Channel Power MOSFET
  • BSC117N08NS5 |
    N-Channel Power MOSFET
  • IPB110N20N3LF |
    N-Channel Power MOSFET
  • CY15B102Q-SXET |
    F-RAM (Ferroelectric RAM)
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0811ND - 201401-BSG0811ND - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0811ND
201401-BSG0811ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0811ND 201401-BSG0811ND
Manufacturer: Infineon Technologies Win Source Part Number: 201401-BSG0811ND Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Family Name: BSG0811ND Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TISON-8 Maximum Power Dissipation: 2.5W Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 19A, 41A Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8.4nC @ 4.5V Max Input Capacitance: 1100pF @ 12V Maximum Rds On at Id,Vgs: 3 mOhm @ 20A, 10V ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 201401-BSG0811ND
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Family Name: BSG0811ND
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TISON-8
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 19A, 41A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 4.5V
Max Input Capacitance: 1100pF @ 12V
Maximum Rds On at Id,Vgs: 3 mOhm @ 20A, 10V
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
40V MOSFET Transistor
2088-BSG0811ND
40V MOSFET Transistor 2088-BSG0811ND
MOSFETs TRENCH <= 40V Product overview: BSG0811ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSG0811ND can be used for catalog matching and distributor lookup.

MOSFETs TRENCH <= 40V Product overview: BSG0811ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSG0811ND can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET DIFFERENTIATED MOSFETS

MOSFET DIFFERENTIATED MOSFETS

Buy Now Datasheet
Transistors - BSG0811ND - ODG (Origin Data Global)
Shenzhen, China
Transistors
BSG0811ND
Transistors BSG0811ND
MOSFET TRENCH <= 40V

MOSFET TRENCH <= 40V

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global)
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number BSG0811ND 201401-BSG0811ND 2088-BSG0811ND BSG0811ND BSG0811ND
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0811ND 40V MOSFET Transistor MOSFET Transistors
Polarity N-Channel; N+N N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 8.00E-4 to 0.0030 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type PG-TISON-8 SOT3; PG-TISON-8 Reel
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