OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.
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Manufacturer: Infineon Technologies
Win Source Part Number: 201401-BSG0811ND
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Family Name: BSG0811ND
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TISON-8
Maximum Power Dissipation: 2.5W
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 19A, 41A
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8.4nC @ 4.5V
Max Input Capacitance: 1100pF @ 12V
Maximum Rds On at Id,Vgs: 3 mOhm @ 20A, 10V
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
MOSFETs TRENCH <= 40V Product overview: BSG0811ND from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-BSG0811ND can be used for catalog matching and distributor lookup.
| Infineon Technologies AG | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSG0811ND | 201401-BSG0811ND | 2088-BSG0811ND | BSG0811ND | BSG0811ND |
| Product Name | N-Channel Power MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0811ND | 40V MOSFET Transistor | Transistors | MOSFET |
| Polarity | N-Channel; N+N | N-Channel | N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| rDS(on) | 8.00E-4 to 0.0030 ohms | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | PG-TISON-8 | SOT3; PG-TISON-8 | Reel |