Infineon Technologies AG N-Channel Power MOSFET BSG0810NDI

Description
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50A max average load current Source-down low side MOSFET for better PCB cooling Internally connected low-side and high side (lowest loop inductance) High side Kelvin connection for more efficient driving Benefits Compact and simplified layout for a DC-DC converter Optimized layout with lowest loop inductivity and best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications Edge computing Solutions for inductive wireless charging above 50 W Designers who used this product also designed with ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash
  • N-Channel Power MOSFET - BSG0810NDI - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0810NDI - 744911-BSG0810NDI - Win Source Electronics
    Win Source Electronics
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Description
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50A max average load current Source-down low side MOSFET for better PCB cooling Internally connected low-side and high side (lowest loop inductance) High side Kelvin connection for more efficient driving Benefits Compact and simplified layout for a DC-DC converter Optimized layout with lowest loop inductivity and best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications Edge computing Solutions for inductive wireless charging above 50 W Designers who used this product also designed with ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash
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Datasheet
Datasheet Summary
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BSG0810NDI is a dual asymmetric N-channel OptiMOS™5 MOSFET in a PG-TISON8-4 package, designed for high-performance buck converters. It integrates a high-side and low-side transistor with a monolithic Schottky-like diode. The device has a continuous drain current rating of 50 A for both transistors at T_C = 70 °C and V_GS = 10 V, with a drain-source breakdown voltage of 25 V. Thermal resistance from junction to case is 4.3 K/W for the high-side and 1.8 K/W for the low-side. Drain-source on-resistance is 3.0 mΩ max at V_GS = 10 V and 20 A for the high-side, and 0.9 mΩ max under same conditions for the low-side. The device is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards J-STD-20 and JESD-22. Operating and storage temperature range is -55 to 150 °C.

Datasheet Summary
Powered by GS/AI

BSG0810NDI is a dual asymmetric N-channel OptiMOS™5 MOSFET in a PG-TISON8-4 package, designed for high-performance buck converters. It integrates a high-side and low-side transistor with a monolithic Schottky-like diode. The device has a continuous drain current rating of 50 A for both transistors at T_C = 70 °C and V_GS = 10 V, with a drain-source breakdown voltage of 25 V. Thermal resistance from junction to case is 4.3 K/W for the high-side and 1.8 K/W for the low-side. Drain-source on-resistance is 3.0 mΩ max at V_GS = 10 V and 20 A for the high-side, and 0.9 mΩ max under same conditions for the low-side. The device is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards J-STD-20 and JESD-22. Operating and storage temperature range is -55 to 150 °C.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSG0810NDI - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSG0810NDI
N-Channel Power MOSFET BSG0810NDI
OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. Summary of Features 50A max average load current Source-down low side MOSFET for better PCB cooling Internally connected low-side and high side (lowest loop inductance) High side Kelvin connection for more efficient driving Benefits Compact and simplified layout for a DC-DC converter Optimized layout with lowest loop inductivity and best thermal performance Potential Applications Desktop and server Single-phase & multiphase POL CPU/GPU regulation in notebooks & DDR memory High power density voltage regulator Applications Edge computing Solutions for inductive wireless charging above 50 W Designers who used this product also designed with ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash ESD108-B1-CSP0201 | Low capacitance diodes for ESD protection S25FL256SAGBHV203 | Quad SPI Flash

OptiMOS™ 5 Power Block is a leadless SMD package in a 5.0x6.0mm² package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS™ 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.


Summary of Features

  • 50A max average load current
  • Source-down low side MOSFET for better PCB cooling
  • Internally connected low-side and high side (lowest loop inductance)
  • High side Kelvin connection for more efficient driving

Benefits

  • Compact and simplified layout for a DC-DC converter
  • Optimized layout with lowest loop inductivity and best thermal performance

Potential Applications

  • Desktop and server
  • Single-phase & multiphase POL
  • CPU/GPU regulation in notebooks & DDR memory
  • High power density voltage regulator

Applications

  • Edge computing
  • Solutions for inductive wireless charging above 50 W

Designers who used this product also designed with


  • ESD108-B1-CSP0201 |
    Low capacitance diodes for ESD protection
  • S25FL256SAGBHV203 |
    Quad SPI Flash
  • ESD108-B1-CSP0201 |
    Low capacitance diodes for ESD protection
  • S25FL256SAGBHV203 |
    Quad SPI Flash
  • ESD108-B1-CSP0201 |
    Low capacitance diodes for ESD protection
  • S25FL256SAGBHV203 |
    Quad SPI Flash
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0810NDI - 744911-BSG0810NDI - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0810NDI
744911-BSG0810NDI
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0810NDI 744911-BSG0810NDI
Manufacturer: Infineon Technologies Win Source Part Number: 744911-BSG0810NDI Manufacturer Homepage: www.infineon.com Reference case: PG-TSDSON Reference Date Code: 1632+ Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 744911-BSG0810NDI
Manufacturer Homepage: www.infineon.com
Reference case: PG-TSDSON
Reference Date Code: 1632+
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
MOSFET Transistor
285-BSG0810NDI
MOSFET Transistor 285-BSG0810NDI
Pb-free lead plating; RoHS compliant Product overview: BSG0810NDI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSG0810NDI can be used for catalog matching and distributor lookup.

Pb-free lead plating; RoHS compliant Product overview: BSG0810NDI from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BSG0810NDI can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSG0810NDI 744911-BSG0810NDI 285-BSG0810NDI
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSG0810NDI MOSFET Transistor
Polarity N-Channel; N+N
Transistor Technology / Material Si/SiC
rDS(on) 9.00E-4 to 0.0030 ohms
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